Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering

Yugami, Hiroo; Nakashima, S.; Mitsuishi, Akiyoshi; Uemoto, Atsuko; Shigeta, Mitsuhiro; Furukawa, Katsuki; Suzuki, Akira; Nakajima, Shin

doi:10.1063/1.338830

Cited by 141 publications

(68 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Drude model, including an electronic damping parameter, is actually applied to determine the carrier density in many analyses of LOPCM's in zinc-blende semiconductors and other compounds being nowadays actively investigated, such as SiC and GaN. [12][13][14][15][16] In the present paper, we show that the carrier concentrations obtained by applying either the Drude or the hydrodynamical model differ substantially from those obtained by applying the Lindhard-Mermin model. For a certain range of carrier densities, the Drude model may accidentally yield only small differences in relation to the LindhardMermin model, but this is due to the partial compensation of different effects that are neglected in the Drude model.…”

Section: Introductionmentioning

confidence: 79%

Raman scattering by LO phonon-plasmon coupled modes inn-type InP

et al. 1999

View full text Add to dashboard Cite

We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-InP for carrier densities between 6ϫ10 16 and 1ϫ10 19 cm Ϫ3 . A line-shape theory based on the Lindhard-Mermin dielectric function that takes into account the nonparabolicity of the InP conduction band as well as temperature and finite wave-vector effects is used to fit the Raman spectra and extract accurate values of the electron density. The results obtained from the Lindhard-Mermin model are compared with the charge density determinations based on the Drude and the hydrodynamical models, and the approximations involved in these models are discussed. ͓S0163-1829͑99͒10431-4͔

show abstract

Section: Introductionmentioning

confidence: 79%

Raman scattering by LO phonon-plasmon coupled modes inn-type InP

et al. 1999

View full text Add to dashboard Cite

show abstract

“…Moreover, by comparing these results with previous works on b-SiC, this asymmetry allows us to roughly place the carrier density in the range 10 18 -10 19 cm -3 . [21,22] The absolute position of the LO mode (970.5 cm -1 ) and its full width at half-maximum of 6.75 cm -1 do not permit a more precise determination of the doping level because of the mixture of different SiC polytypes. Nevertheless, in Figure 3, we see that the position of this band does not shift with probe position.…”

Section: Low-frequency Raman Spectroscopy and Carrier Concentration Omentioning

confidence: 99%

A Raman Spectroscopy Study of Individual SiC Nanowires

Bechelany¹,

Brioude²,

Cornu³

et al. 2007

Adv Funct Materials

173

117

View full text Add to dashboard Cite

Raman spectroscopy of a single 40 nm 3C‐SiC nanowire (NW) has been achieved at room temperature with the use of surface‐enhanced Raman scattering (SERS). The structure used to enhance the Raman scattering process is based on a tungsten tip covered by a thin gold layer; a NW is attached to the apex of this tip. The specific dimensions of the SiC NWs (diameters are a few tens of nanometers and lengths are a few micrometers) allow us to study several parts of an individual NW according to the lateral resolution of the Raman microspectrometer. High‐resolution transmission electron microscopy (HRTEM) images show both atomic arrangements in the SiC NWs with growth predominantly in the [111] direction and abundant structural defects. Effort has been focused on the correlation between the Raman spectroscopic profiles and the structural deformations. The Fano interference features of the sharp phonon lines have been used to evaluate the free carrier concentration.

show abstract

“…In this case, one can observe in the Raman spectra a new mode due to LO phonon-plasmon coupling. In SiC the plasmons are overdamped (ω p τ ≤ 1) because of large collision damping [12]. For these crystals the upper branch of LO-phonon-plasmon coupled mode shows slight shifts to the high-frequency side accompanied by broadening of the bands when the carrier concentration is increased.…”

Section: Intensity (Arb Un)mentioning

confidence: 98%

Raman scattering investigation on porous SiC layers

Torchynska

Rodrı́guez

Hernandez

et al. 2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

This paper presents the results of the non-contact and non-destructive characterization of micro-porous SiC layers subjected to reactive ion treatment using Raman scattering, Scanning Electron Microscopy, and Atomic Force Microscopy. A comparative study of the Raman spectroscopy on the SiC wafer and the porous SiC layers has shown a number of new features specific for nano-crystallite materials, such as crystal disordering, changes of Raman polarizability tensors, appearance of the surface polariton modes and enhancement of the LO phonon-plasmon coupling. The influence of all these effects on modification of Raman scattering spectra have been discussed.

show abstract

Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering

Cited by 141 publications

References 12 publications

Raman scattering by LO phonon-plasmon coupled modes inn-type InP

Raman scattering by LO phonon-plasmon coupled modes inn-type InP

A Raman Spectroscopy Study of Individual SiC Nanowires

Raman scattering investigation on porous SiC layers

Contact Info

Product

Resources

About