Characterization of surface modification mechanisms for boron nitride films under plasma exposure

Higuchi, Tomoya; Noma, Masao; Yamashita, Michiru; Urabe, Keiichiro; Hasegawa, Shigehiko; Eriguchi, Koji

doi:10.1016/j.surfcoat.2019.07.071

Cited by 6 publications

(1 citation statement)

References 106 publications

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“…64) Recently, the modification of the surface properties of c-BN films prepared by this system was investigated. 65,66) It was demonstrated that the c-BN films exhibited superior anti-erosion property against plasma exposure. Matsuda et al reported 67) an improved RePAC system for a Si wafer process, where E ion was controlled by an applied RF bias voltage (with a frequency of 400 kHz) and Γ ion by I A supplied from a filament.…”

Section: Introductionmentioning

confidence: 99%

Ion irradiation-induced sputtering and surface modification of BN films prepared by a reactive plasma-assisted coating technique

Matsuda

Hamano

Asamoto

et al. 2022

Jpn. J. Appl. Phys.

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Boron nitride (BN) films with a wide variety of nano-network structures (sp2–sp3 bonded) were prepared and their sputtering behaviors were investigated. BN films were formed using a reactive plasma-assisted coating technique. Fourier transform infrared spectroscopy (FT-IR) and nanoindentation analyses confirmed the presence of sp2- and sp3-bonded phases. Then, the thickness change by plasma exposure was studied for various BN films. Sputtered depth after the plasma exposure of the prepared BN films was lower than that of SiO2 films. While no clear change was observed in the FT-IR spectra after the plasma exposure, the leakage current and dielectric constant changed due to the surface modification. It was found that the modified layer underneath the sputtered surface contained the local defects which play a role as carrier trapping or hopping sites. The sputtering behavior analysis in combination with electrical measurements is a useful methodology for designing BN films.

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Section: Introductionmentioning

confidence: 99%

Ion irradiation-induced sputtering and surface modification of BN films prepared by a reactive plasma-assisted coating technique

Matsuda

Hamano

Asamoto

et al. 2022

Jpn. J. Appl. Phys.

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Nucleation retardation of cubic boron nitride films caused by the addition of oxygen in argon‑nitrogen sputtering gas

Choi

Huh

Baik

2021

Diamond and Related Materials

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Spectroscopic ellipsometry characterization of boron nitride films synthesized by a reactive plasma-assisted coating method

Hamano

Matsuda

Asamoto

et al. 2022

Applied Physics Letters

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The optical constants of boron nitride (BN) films on Si substrates were systematically investigated using spectroscopic ellipsometry. BN films with a wide variety of atomic compositions (B/N ratios) and bonding phases (sp2/sp3 ratios) were synthesized using a reactive plasma-assisted coating method, which consists of magnetically confined vacuum-arc discharge and electron-beam evaporation. A wide range of optical constants were assigned to various BN films via a model fitting procedure employing the Tauc–Lorentz optical model. The estimated film thicknesses corresponded with those determined using scanning electron microscopy. The optical constants of the films were found to be significantly dependent on their respective atomic compositions, which shows a transition from the semiconducting to the insulating phase in BN films in response to the deposition conditions. Ion bombardment during the film growth induced an increase in the refractive index along with an increase in the amount of the sp3 phase. Furthermore, the extinction coefficient increased substantially in the ultraviolet region in response to the generation of defects in the BN nano-network structures.

show abstract

Characterization of surface modification mechanisms for boron nitride films under plasma exposure

Cited by 6 publications

References 106 publications

Ion irradiation-induced sputtering and surface modification of BN films prepared by a reactive plasma-assisted coating technique

Ion irradiation-induced sputtering and surface modification of BN films prepared by a reactive plasma-assisted coating technique

Nucleation retardation of cubic boron nitride films caused by the addition of oxygen in argon‑nitrogen sputtering gas

Spectroscopic ellipsometry characterization of boron nitride films synthesized by a reactive plasma-assisted coating method

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