Abstract:We present the results of a comprehensive investigation concerning changes in the structural and electrical properties of heavily (2 × 10 20 cm −3 ) in situ boron-doped polysilicon thin films by the low pressure chemical vapour deposition method before and after thermal oxidation treatments. Secondary ion mass spectrometry and transmission electron microscopy, with their associated diffraction diagrams, and four-point probe resistivity measurements are performed on sub-micrometre layers (≈300 nm) deposited at … Show more
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