Improvement of Temperature Coefficient of Resistance by Co-Implantation of Argon or Xenon or Fluorine in Boron Implanted Polysilicon Resistors

Ashuah, I.; Shauly, Eitan N.; Shacham‐Diamand, Yosi

doi:10.1109/tsm.2009.2017655

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…The TCR for large-grain polysilicon is positive while that for small-grain polysilicon is negative due to the electrical characteristics of the grain boundary. The positive TCR reflects resistivity inside the grains, and the negative TCR reflects the barrier resistance of the grain boundary [36]. These opposite characteristics cancel out the temperature dependency of the resistivity.…”

Section: Keep Scheme Of Optimized Process Modulementioning

confidence: 97%

A Flexible 0.18 $\mu{\rm m}$ BiCMOS Technology Suitable for Various Applications

Hashimoto

Nonaka

Tominari

et al. 2013

IEEE J. Electron Devices Soc.

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Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance. The BiCMOS process is divided into blocks, and the ordering of their processing is optimized so that they do not interfere with each other. Low-thermal-budget SiGe HBT formation is achieved using a minimal-moisture-desorption oxide layer, thereby avoiding disturbing the CMOS process. This technology, which can also be applied to the 0.13 μm generation, has been used for applications ranging from high-speed ones like automotive radar and 40 Gbps optical communication to consumer ones like wireless.

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Section: Keep Scheme Of Optimized Process Modulementioning

confidence: 97%

A Flexible 0.18 $\mu{\rm m}$ BiCMOS Technology Suitable for Various Applications

Hashimoto

Nonaka

Tominari

et al. 2013

IEEE J. Electron Devices Soc.

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show abstract

“…5,6) A poly-Si thin film is the most ideal choice for embedded resistors in CMOS integrated circuit because of its low and stable voltage and temperature coefficients. 7) Many factors influence the electrical properties of the poly-Si resistors during the deposition process, such as process temperature, dopant concentrations, and the overall thermal budget. 8) These conditions also affect the grain sizes and the grain boundaries (GBs), which confer different resistive properties.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of stability and robustness of poly-Si resistors with different dopant concentrations

Lin¹,

Yang²,

King³

2022

Jpn. J. Appl. Phys.

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The stability and robustness of lightly and highly doped poly-Si resistors were evaluated. These resistors exhibited distinct electrical resistance properties and temperature dependences, which can be explained through the grain and grain boundary conduction mechanisms. The resistance shift saturated under the low current stress condition, but continued to increase under the high current stress condition. A novel carrier trapping density model was proposed to explain this behavior. A generalized free energy model that considered stress temperature and stress current dependences was proposed to account for the stability lifetime of a poly-Si resistor based on the resistance shift criterion. Robustness evaluation with transmission line pulse test revealed that the breakdown current exhibited a pulse width dependence which was further explained by a thermal- conduction energy model.

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Large scale synthesis of silicon nanowires

Iriarte

2010

J Nanopart Res

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Improvement of Temperature Coefficient of Resistance by Co-Implantation of Argon or Xenon or Fluorine in Boron Implanted Polysilicon Resistors

Cited by 3 publications

References 15 publications

A Flexible 0.18 $\mu{\rm m}$ BiCMOS Technology Suitable for Various Applications

A Flexible 0.18 $\mu{\rm m}$ BiCMOS Technology Suitable for Various Applications

Evaluation of stability and robustness of poly-Si resistors with different dopant concentrations

Large scale synthesis of silicon nanowires

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