Characterization of sputtered ZnO thin film as sensor and actuator for diamond AFM probe

Shibata, Takayuki; Unno, Kazuya; Makino, Eiji; Ito, Yasuzo; Shimada, Shiro

doi:10.1016/s0924-4247(02)00339-4

Cited by 113 publications

(46 citation statements)

References 15 publications

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“…In addition to this, as it shows much stronger electric polarization effects than other wide-gap semiconductors, such as GaN and SiC, 8,9 ZnO has great potential for manufacturing energy-harvesting systems. 2,[10][11][12] Moreover, as ZnO is a semiconducting piezoelectric material, it is already widely used in microelectromechanical systems for making sensors 13 and actuators 14 and in communications for surface acoustic wave and thin film bulk acoustic wave resonator devices. 15,16 However, ZnO's piezoelectric response is affected by its built-in electric field, due to the high mobility of its charge carriers, which might partially compensate the effect of an external applied electric field.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectricity and charge trapping in ZnO and Co-doped ZnO thin films

et al. 2017

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Highly efficient isolation of waterborne sound by an air-sealed meta-screen AIP Advances 7, 055001 (2017) Piezoelectricity and charge storage of undoped and Co-doped ZnO thin films were investigated by means of PiezoResponse Force Microscopy and Kelvin Probe Force Microscopy. We found that Co-doped ZnO exhibits a large piezoelectric response, with the mean value of piezoelectric matrix element d 33 slightly lower than in the undoped sample. Moreover, we demonstrate that Co-doping affects the homogeneity of the piezoelectric response, probably as a consequence of the lower crystalline degree exhibited by the doped samples. We also investigate the nature of the interface between a metal electrode, made up of the PtIr AFM tip, and the films as well as the phenomenon of charge storage. We find Schottky contacts in both cases, with a barrier value higher in PtIr/ZnO than in PtIr/Co-doped ZnO, indicating an increase in the work function due to Co-doping. © 2017 Author(s)

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Section: Introductionmentioning

confidence: 99%

Piezoelectricity and charge trapping in ZnO and Co-doped ZnO thin films

et al. 2017

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“…Besides, ZnO film is compatible with the semiconductor process. Therefore, ZnO has been widely used as sensors and actuators in microelectromechanical systems and as SAW and BAW devices in communication field [16,17]. However, the performance improvement of piezoelectric device demands stronger piezoelectric behavior and piezoresponse d 33 as the important parameter for evaluating piezoelectric property of ZnO demands improvement.…”

Section: Introductionmentioning

confidence: 99%

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Pan

Luo

Yang

et al. 2011

Sci. China Technol. Sci.

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In recent years, with the growing concerns on environmental protection and human health, new materials, such as lead-free piezoelectric materials, have received increasing attention. So far, three types of lead-free piezoelectric systems have been widely researched, i.e., perovskites, bismuth layer-structured ferroelectrics, and tungsten-bronze type ferroelectrics. This article presents a new type of environmental friendly piezoelectric material with simple structure, the transition-metal(TM)-doped ZnO. Through substituting Zn 2+ site with small size ion, we obtained a series of TM-doped ZnO with giant piezoresponse, such as Zn 0.975 V 0.025 O of 170 pC/N, Zn 0.94 Cr 0.06 O of 120 pC/N, Zn 0.913 Mn 0.087 O of 86 pC/N and Zn 0.988 Fe 0.012 O of 127 pC/N. The tremendous piezoresponses are ascribed to the introduction of switchable spontaneous polarization and high permittivity in TM-doped ZnO.The microscopic origin of giant piezoresponse is also discussed. Substitution of TM ion with small ionic size for Zn 2+ results in the easier rotation of noncollinear TM-O1 bonds along the c axis under the applied field, which produces large piezoelectric displacement and corresponding piezoresponse enhancement. Furthermore, it proposes a general rule to guide the design of new wurtzite semiconductors with enhanced piezoresponses. That is, TM-dopant with ionic size smaller than Zn 2+ substitutes for Zn 2+ site will increase the piezoresponse of ZnO significantly. Finally, we discuss the improved performances of some TM-doped ZnO based piezoelectric devices.

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“…Among them pulsed laser deposition (PLD) [140,141], sputtering [119,142], CVD [143], metalorganic chemical vapor deposition (MOCVD) [144], and MBE [145] can be used for depositing thin films of ZnO on various substrates and with different crystalline characteristics. MOCVD and MBE can promote epitaxial growth of ZnO if a material with lattice constants close to those of ZnO is chosen as substrate.…”

Section: Dense Zno Filmsmentioning

confidence: 99%

“…Another advantage is represented by the actuation capability of the piezoelectric film since, when polarized, it responds with a deformation that is in turn transferred to the cantilever. This configuration is useful when indentation or scratching operations are desired [142].…”

Section: Dense Zno Filmsmentioning

confidence: 99%