Characterization of Sputtered Ta and TaN Films by Spectroscopic Ellipsometry

Waechtler, Thomas; Gruska, Bernd; Zimmermann, Sven; Schulz, Stefan; Geßner, Thomas

doi:10.1109/icsict.2006.306675

Cited by 6 publications

(16 citation statements)

References 7 publications

(6 reference statements)

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“…3.3. This fact might come from the use of permittivities for Ta, 19 TaN 19 or Cu 20 found in literature. These values were measured by spectrometric ellipsometry.…”

Section: Large Photodiode With Gratingmentioning

confidence: 97%

“…These values were measured by spectrometric ellipsometry. Deposition and etching method and conditions (substrate, thickness of the layer, temperature... 19 ) differ from one process to another and lead to structural differences which can significantly modify the permittivity of the considered materials. …”

Section: Large Photodiode With Gratingmentioning

confidence: 99%

“…The dielectric permittivity in the visible range of tantalum and tantalum nitride used in mircroelectronics can be found in Ref. 19. The dielectric permittivities of copper and silicon used in the model can be found in Ref.…”

Section: Test Structures Descriptionmentioning

confidence: 99%

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The Finite Element Method as applied to the calculation of the quantum efficiency in optoelectronic imaging devices

et al. 2008

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We present a new formulation of the Finite Element Method (FEM) dedicated to the 2D rigorous solving of Maxwell equations adapted to the calculation of the diffracted field in optoelectronic subwavelength structures. The advantage of this method is that its implementation remains independent of the number of layers in the structure, of the number of diffractive patterns, of the geometry of the diffractive object and of the properties of the materials.The spectral response of large test photodiodes that can legitimately be represented in 2D has been measured on a dedicated optical bench and confronted to the theory. The representativeness of the model as well as the possibility of conceiving this way simply processable diffractive spectral filters are discussed.

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“…3.3. This fact might come from the use of permittivities for Ta, 19 TaN 19 or Cu 20 found in literature. These values were measured by spectrometric ellipsometry.…”

Section: Large Photodiode With Gratingmentioning

confidence: 97%

Section: Large Photodiode With Gratingmentioning

confidence: 99%

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The Finite Element Method as applied to the calculation of the quantum efficiency in optoelectronic imaging devices

et al. 2008

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“…Although sputtered TaN films have been widely investigated for their different properties, their optical properties have not been analyzed yet much. Recent studies have shown that spectroscopic ellipsometry (SE) can be used to characterize and measure the thin film thickness because of its fast and non-destructive nature [2,[27][28][29]. Aouadi et al [2] have studied the effects of varying N2 flow rates from 1 to 4 sccm on the structural and optical properties of TaN thin films.…”

Section: Introductionmentioning

confidence: 99%

“…They have found a good agreement of optical properties with narrow-band data available for similar thin films. It was also shown that the optical properties of the films strongly depends with both substrate and film thickness [27]. Ma et al have been studied the temperature-dependent dielectric function of TiN films by SE [28].…”

Section: Introductionmentioning

confidence: 99%

Influence of N<sub>2</sub> Flows on Sputtered Ta(N) films: Electrical, Structural, Chemical and Optical Properties

Hu¹,

Rasadujjaman²,

Wang³

et al. 2021

Preprint

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By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with a different N2 flow rate of 0, 12, 17, 25, 38, 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of the N2 flows. On the other hand, the resistivity increases, the crystal size decreases, and the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5 (130,040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, and dependent on the crystal size and crystal phase structure.

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Refractory Metals and Oxides for High-Temperature Structural Color Filters

Duncan

Barney

Dias

et al. 2022

ACS Appl. Mater. Interfaces

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Refractory metals have recently garnered significant interest as options for photonic applications due to their superior high-temperature stability and versatile optical properties. However, most previous studies only consider their room-temperature optical properties when analyzing these materials’ behavior as optical components. Here, we demonstrate structural color pixels based on three refractory metals (Ru, Ta, and W) for high-temperature applications. We quantify their optical behavior in an oxygenated environment and determine their dielectric functions after heating up to 600 °C. We use in situ oxidation, a fundamental chemical reaction, to form nanometer-scale metal oxide thin-film bilayers on each refractory metal. We fully characterize the behavior of the newly formed thin-film interference structures, which exhibit vibrant color changes upon high-temperature treatment. Finally, we present optical simulations showing the full range of hues achievable with a simple two-layer metal oxide/metal reflector structure. All of these materials have melting points >1100 °C, with the Ta-based structure offering high-temperature stability, and the Ru- and W-based options providing an alternative for reversible color filters, at high temperatures in inert or vacuum environments. Our approach is uniquely suitable for high-temperature photonics, where the oxides can be used as conformal coatings to produce a wide variety of colors across a large portion of the color gamut.

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Characterization of Sputtered Ta and TaN Films by Spectroscopic Ellipsometry

Cited by 6 publications

References 7 publications

The Finite Element Method as applied to the calculation of the quantum efficiency in optoelectronic imaging devices

The Finite Element Method as applied to the calculation of the quantum efficiency in optoelectronic imaging devices

Influence of N<sub>2</sub> Flows on Sputtered Ta(N) films: Electrical, Structural, Chemical and Optical Properties

Refractory Metals and Oxides for High-Temperature Structural Color Filters

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