Characterization of sol-gel Pb(Zr_0.53Ti_0.47)O₃films in the thickness range 0.25–10 μm

Abstract

Films of nominal composition Pb(Zr0.53Ti0.47)O3 (PZT) in the thickness range 0.25−10 μm have been fabricated on Pt/Ti/SiO2/Si substrates using a propanediol-based sol-gel route. The spun-on coatings were prefired at 350 and 600 °C between successive depositions before firing the multilayer stack at 700 °C for 15 min. The variations in crystallite orientation, microstructure, and dielectric and ferroelectric properties were determined as a function of film thickness. For a constant applied field of 150 kV cm−1, remanent polarization decreased progressively from 35 to 17 μC cm−2 as film thickness decreased in the range 10–0.25 μm; values of coercive field were reasonably constant, 18–19 kV cm−1, for films between 2 and 10 μm, but increased sharply below 2 μm, reaching 46 kV cm−1 for a 0.25 μm film. Relative permittivity (εr) decreased from approximately 1400 to approximately 940 with most of the reduction occurring in films less than 2 μm in thickness. These trends are discussed in terms of the presumed influence of interfacial phenomena on the measured electrical response.

Piezoelectric materials for high frequency medical imaging applications: A review

“…Therefore, piezoelectric thin/thick film technology may be a good low-cost alternative solution for high frequency transducer (100-200 MHz) designs. However, the only drawback to using these materials is their inferior piezoelectric properties when compared to bulk produced piezoceramics [42][43][44][45][46][47][48].…”

“…Chen et al [45] produced PZT thick films by a modified sol-gel process involving an acetic acid route. Kurchania and Milne [46] also fabricated PZT thick films using titanium di-isopropoxide bi-acetylacetonate as a precursor material. Finally, Zhou et al reported the development of PZT composite films [47], and the fabrication of microelectromechanical (MEMS) tonpilz transducers using modified sol-gel PZT films [48].…”

Preparation and characterization of lead zirconate titanate thick films prepared by chemical solution deposition for MEMS applications

“…PZT thick films meet the requirements of the device miniaturization and integration [1]. Among the reported deposition methods [5][6][7][8][9][10][11][12], chemical solution deposition (CSD) has been widely used to deposit PZT thick films. PZT thick films are usually grown on Pt/Ti/SiO 2 /Si substrate, which show excellent electrical properties.…”

Electric properties of 0.2Pb(Mg1/3Nb2/3)O3-0.8Pb(Zr0.475Ti0.525)O3 thick film fabricated by electrophoresis deposition

“…Several Investigations have described that the piezoelectric coefficients ¾ 31 , d 31 and d 33 are dependent upon the piezoelectric film thickness. 1), 2) The film thickness dependence of electric properties exists in thickness range of less than 0.2¯m.…”