Characterization of SiO2 thin films prepared by plasma-activated chemical vapour deposition

Pfuch, Andreas; Heft, Andreas; Weidl, R.; Lang, K.-D.

doi:10.1016/j.surfcoat.2005.11.110

Cited by 40 publications

(25 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the probability of defects in the network increases (free bonds, incorporation of carbon, etc.). This explanation is supported by the investigations of Pfuch et al They observed that SiO 2 -rich coatings deposited using higher power show a larger amount of Si-O-Si bonds [20].…”

Section: Discussionsupporting

confidence: 55%

See 1 more Smart Citation

Dissolution of thin SiO2-coatings – Characterization and evaluation

Klause

Rothhaar

Bicker

et al. 2010

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

Section: Discussionsupporting

confidence: 55%

“…This mechanism can be understood by the means of a structure model [1,19,20] regarding the variations of cross-linking and defects within the SiO 2 -layers. Using a simplified empirical rate law we obtained dissolution rate constants k + between 10 À13 and 10 À11 mol cm À2 s À1 .…”

Section: Resultsmentioning

confidence: 99%

Dissolution of thin SiO2-coatings – Characterization and evaluation

Klause

Rothhaar

Bicker

et al. 2010

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

“…Such shifts have previously been related to various combinations of carbon and oxygen atoms bonded to silicon. Configurations such as Si(O) 1 C 3 , Si(O) 2 C 2 , Si(O) 3 C 1 and Si(O) 4 have been proposed, with the Si(O) 4 configuration showing the highest binding energy for the 2p electrons 20, 27–30. Following this interpretation, we can assume that the films deposited at 60 W input have a higher concentration of Si(O) 1 for which the Si 2p peaks is observed at 102.3 eV.…”

Section: Resultsmentioning

confidence: 85%

Adhesion Improvement of Plasma‐Polymerized Maleic Anhydride Films on Gold Using HMDSO/O₂ Adhesion Layers

Chifen

Jenkins

Knoll

et al. 2007

Plasma Processes & Polymers

View full text Add to dashboard Cite

The use of SiO2‐like layers as adhesion‐promoting inter‐layers between a reactive plasma polymer film and a gold substrate is compared to a self‐assembled monolayer of dodecanethiol and to bare gold. The chemical structure of the silicon oxide film is optimized by varying feed gas ratios and process input power. A 5 s oxygen plasma modification of the SiO2‐like film deposited from hexamethyldisiloxane has been found to be vital to prepare the surface for covalent bonding of the subsequently deposited reactive polymer layer. Film chemical structures and reactivity have been studied using IR reflection‐absorption spectroscopy, XPS, contact angle goniometry and SPR spectroscopy.

show abstract

“…The growing organic content in the films may also cause a change in the shape of Si-O-Si band around 1040 cm -1 to a broader peak, and shift the peak to lower wavenumbers. [21] It is reasonable to assume that increasing precursor concentration while maintaining a fixed level of electric energy for the activation of the precursor will result in the level of energy gradually becoming insufficient. In our plasma torch system the concentration of HMDSO needed for a complete chemical transformation from HMDSO to SiO 2 was a flow rate of the oxygen carrier gas lower than 100 mL min -1 under an applied voltage of 4.0 kV.…”

Section: Effect Of Carrier Gas Flow Ratementioning

confidence: 99%

A Nonequilibrium, Atmospheric‐Pressure Argon Plasma Torch for Deposition of Thin Silicon Dioxide Films

Kasih

Kuroda

Kubota

2007

Chemical Vapor Deposition

View full text Add to dashboard Cite

A nonequilibrium, atmospheric-pressure plasma torch that can be generated either in He or Ar gas by using a pulsed highvoltage power supply with the discharge temperature in the range 22-35°C has been developed. This system is used to deposit silicon dioxide films from a hexamethyldisiloxane (HMDSO) precursor diluted in an oxygen carrier gas. It is concluded that, in terms of both quality and deposition rate at the same applied power, frequency, and gas composition, Ar plasma is more powerful than He plasma for depositing SiO 2 -like films. The maximum feed rate of HMDSO/O 2 injected into the Ar plasma torch is limited to 100 mL min -1 to ensure inorganic coatings are deposited. In order to improve the visual quality, without adversely affecting the inorganic features of the film, a small amount of nitrogen (N 2 ) can be added to the Ar as a working gas. When the ratio of Ar to N 2 in the flow gas is 30:1, the discharge behavior is transformed from filamentary to glowlike as a result of the quenching effect of admixed N 2 on Ar plasma.

show abstract

Characterization of SiO2 thin films prepared by plasma-activated chemical vapour deposition

Cited by 40 publications

References 3 publications

Dissolution of thin SiO2-coatings – Characterization and evaluation

Dissolution of thin SiO2-coatings – Characterization and evaluation

Adhesion Improvement of Plasma‐Polymerized Maleic Anhydride Films on Gold Using HMDSO/O₂ Adhesion Layers

A Nonequilibrium, Atmospheric‐Pressure Argon Plasma Torch for Deposition of Thin Silicon Dioxide Films

Contact Info

Product

Resources

About

Characterization of SiO2 thin films prepared by plasma-activated chemical vapour deposition

Cited by 40 publications

References 3 publications

Dissolution of thin SiO2-coatings – Characterization and evaluation

Dissolution of thin SiO2-coatings – Characterization and evaluation

Adhesion Improvement of Plasma‐Polymerized Maleic Anhydride Films on Gold Using HMDSO/O2 Adhesion Layers

A Nonequilibrium, Atmospheric‐Pressure Argon Plasma Torch for Deposition of Thin Silicon Dioxide Films

Contact Info

Product

Resources

About

Adhesion Improvement of Plasma‐Polymerized Maleic Anhydride Films on Gold Using HMDSO/O₂ Adhesion Layers