Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies

Lee, Seung-Yun; Park, Chan Woo

doi:10.1016/j.sse.2006.01.010

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…SiGe heterojunction bipolar transistors (HBTs) 1) have drawn much attention as an active component for rf IC applications because of their compatibility with mature Si technology and rf performance close to that of III-V devices. The SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) process, 2) which integrates SiGe HBTs and Si CMOS transistors on the same wafer, is considered to be one of the most suitable technologies for the realization of a system-on-chip (SOC).…”

Section: Introductionmentioning

confidence: 99%

Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon–Germanium Heterojunction Bipolar Transistors

Lee¹,

Zhu

Cressler

et al. 2008

jjap

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The variation of mixed-mode reliability degradation with emitter scaling in silicon-germanium heterojunction bipolar transistors was investigated. While base current density (J B ) after reverse emitter-base stress increased with increasing perimeter-to-area (P=A) ratio, J B exhibited a reverse behavior in the case of mixed-mode stress. In addition, the up and down variation of J B was observed with increasing stress time in some devices of very small P=A ratios. It is considered that these phenomena resulted from self-heating effect depending on device size.

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Section: Introductionmentioning

confidence: 99%

Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon–Germanium Heterojunction Bipolar Transistors

Lee¹,

Zhu

Cressler

et al. 2008

jjap

Self Cite

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Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Lee

Yoon

Choi

et al. 2007

Applied Surface Science

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Low power and high speed phase-change memory devices with silicon-germanium heating layers

Lee

Yoon

Park

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The switching speed and the reliability of the phase-change memory (PCM) device employing a SiGe film as a heating layer were compared with those of the control device employing a conventional TiN heating layer. The influence of the semiconducting nature of the SiGe film on PCM operation was investigated. The critical pulse width for the onset of a set process was reduced to less than about 50% by substitution of SiGe for TiN. The cycling endurance value for the PCM device with a SiGe heating layer was comparable to that of the control device, which indicated that the introduction of a SiGe film did not induce reliability degradation. The heterojunction between the GeSbTe and SiGe layers was so leaky that the effect of the semiconduction type of SiGe was negligible. The reset current was saturated at a minimum value with increasing resistivity of a SiGe film, which was attributed to the resistance lowering of SiGe at high temperature. The PCM device with a SiGe heating layer was successively fabricated using Si complementary metal oxide semiconductor technology, and its reset current decreased drastically compared to that of the control device.

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Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies

Cited by 3 publications

References 14 publications

Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon–Germanium Heterojunction Bipolar Transistors

Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon–Germanium Heterojunction Bipolar Transistors

Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Low power and high speed phase-change memory devices with silicon-germanium heating layers

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