Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Lee, Seung-Yun; Yoon, Sung‐Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung–Gon; Kim, Sang-Hoon; Lee, Sang‐Heung

doi:10.1016/j.apsusc.2007.07.097

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…This phenomenon can be attributed to the high sticking efficiency of phosphorus to the silicon substrates, which blocks the initiation of the nucleation process, and therefore influences the growth of both silicon NWs and Si (1− x ) Ge x NWs. The increase of the growth rate of boron-doped Si (1− x ) Ge x NWs is consistent with previous observations on the growth of silicon NWs and silicon thin films . These studies report an increase in growth rate with increasing B 2 H 6 /SiH 4 ratio that is ascribed to the enhancement of silane decomposition in the gas phase as a result of the interaction between silane and diborane.…”

Section: Resultssupporting

confidence: 91%

The Influence of Doping on the Chemical Composition, Morphology and Electrical Properties of Si_(1−x)Ge_xNanowires

Givan¹,

Kwiat²,

Patolsky³

2010

J. Phys. Chem. C

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Semiconductor nanowires (NWs) have been widely investigated over the last few decades because of their unique quantum-confined physical properties which enable novel applications and their potential to play a key role in future electronics. The physical properties of binary-alloy Si(1−x)Ge x NWs can be altered both by doping and by changing their chemical alloy composition. The simultaneous control of both parameters is therefore essential, although not straightforward, for the complete utilization of Si(1−x)Ge x NWs. While the influence of several growth parameters on the composition of Si(1−x)Ge x NW alloys was recently explored, the interplay of simultaneously controlling both dopant concentration and alloy composition has not yet been investigated. This study shows that the introduction of either boron or phosphorus as dopants, by the use of diborane (B2H6) or phosphine (PH3) during the growth of the Si(1−x)Ge x NW, has a significant influence on the chemical alloy composition of the NWs produced. This leads to unexpected changes in its physical properties. Therefore, the tailoring of these properties of the NW during its growth requires a complete understanding of the interplay between the doping type and level and the chemical composition. Other aspects of the growth and properties of the Si(1−x)Ge x NW, such as morphology, growth rate, growth yield, and electrical properties, were studied as well.

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Section: Resultssupporting

confidence: 91%

The Influence of Doping on the Chemical Composition, Morphology and Electrical Properties of Si_(1−x)Ge_xNanowires

Givan¹,

Kwiat²,

Patolsky³

2010

J. Phys. Chem. C

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“…Silicon-based functional nanostructures offer large technological perspectives for electronic and optoelectronic applications. Potential application of nanostructures in single electron devices [11], memories [12] and light emitting diode [13] are receiving a noticeable research interest. Most of the previous studies for surface modification induced by laser irradiation concentrated on the formation of periodic ripple structures [14][15][16], and the irradiation effect of different laser parameters has not been reported.…”

Section: Introductionmentioning

confidence: 99%

Microstructure evolution and FT-IR spectra of silicon induced by pulsed laser irradiation

Zhao

et al. 2010

SPIE Proceedings

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Microstructures of silicon induced by pulsed laser irradiation were investigated. Microstructure evolution induced by two different laser configurations (lasers with wave length of 355 nm and 532 nm) was characterized by scanning electron microscopy. The measurement results show that periodic structure and villous structure were fabricated on silicon surface by varying the intensity of the applied lasers under atmospheric conditions. Regardless of the laser configurations used, it is found that the used laser intensity plays an important role in the microstructure formation. At low laser intensity, the main character of the irradiated surface is periodic ripples and the period of ripple structure is about 400 nm. Villus structure is the main feature formed with the increase of laser intensity. The mechanism of the villus formation induced by laser irradiation was proposed. Based on the experimental results, the clusters induced by laser irradiation recombine with each other and grow under the increase of laser intensity. During irradiation, the induced plasma expanded upward from the target surface. The clusters and ions in the plume collided with each other. Besides, the collision also happened between molecules of air and the clusters originated from target. As a result of numerous collisions, neutral molecules were dissociated into polarized nanoclusters. The induced nanoclusters redeposited on the target surface. The clusters recombine with each other and adhere to protuberance on the surface. This process results in the formation of cluster-assembled villous microstructure. The optical character of the irradiated samples was measured by FT-IR spectroscopy, and the transmission spectra were analyzed.

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Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications

Lee

Park

Yoon

et al. 2008

Microelectronic Engineering

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Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Cited by 3 publications

References 16 publications

The Influence of Doping on the Chemical Composition, Morphology and Electrical Properties of Si_(1−x)Ge_xNanowires

The Influence of Doping on the Chemical Composition, Morphology and Electrical Properties of Si_(1−x)Ge_xNanowires

Microstructure evolution and FT-IR spectra of silicon induced by pulsed laser irradiation

Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications

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Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Cited by 3 publications

References 16 publications

The Influence of Doping on the Chemical Composition, Morphology and Electrical Properties of Si(1−x)GexNanowires

The Influence of Doping on the Chemical Composition, Morphology and Electrical Properties of Si(1−x)GexNanowires

Microstructure evolution and FT-IR spectra of silicon induced by pulsed laser irradiation

Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications

Contact Info

Product

Resources

About

The Influence of Doping on the Chemical Composition, Morphology and Electrical Properties of Si_(1−x)Ge_xNanowires

The Influence of Doping on the Chemical Composition, Morphology and Electrical Properties of Si_(1−x)Ge_xNanowires