Characterization of silicon doped with sodium upon high-voltage implantation

Korol, V. M.; Kudriavtsev, Yu.; Zastavnoy, A. V.; Vedenyapin, S. A.

doi:10.1134/s1027451009020232

Cited by 7 publications

(6 citation statements)

References 4 publications

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“…This is further supported by the disappearance of this surface reduction after the annealing at 650 • C when the hydrogen complexes have annealed. The slope of the profile corresponds to what would be expected from the tail of the implanted sodium after low-voltage implantation and subsequent annealing at 800 • C based on [4] if the first few μm are removed. We believe that the observed negative shift in concentration after the post-etch annealing at 650 • C for…”

Section: Sodium-related Defect Centres In N-type Siliconmentioning

confidence: 83%

“…Sodium is not as rapid a diffuser in silicon as its alkalimetal neighbour lithium. However, its thermal stability in the lattice has been shown to be considerably higher [4]. Some discrepancies exist among the exact level of its diffusivity [4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…However, its thermal stability in the lattice has been shown to be considerably higher [4]. Some discrepancies exist among the exact level of its diffusivity [4][5][6][7][8][9]. However, a likely estimation was fitted to the following Arrhenius expression by Korol et al [5]:…”

Section: Introductionmentioning

confidence: 99%

“…over the temperature range 650-900 • C. In a more recent publication by the same author, a flat depth profile was obtained after ion implantation followed by annealing for 30 min at 900 • C [4]. Controversies exist on the solubility of sodium in silicon.…”

Section: Introductionmentioning

confidence: 99%

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Electrically active sodium-related defect centres in silicon

Dahl

Madsbøll

Soiland

et al. 2013

Semicond. Sci. Technol.

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Electrically active defect centres related to sodium in silicon have been examined with deep level transient spectroscopy, and their recombination potential analysed with the microwave photoconductive decay technique. In order to investigate the entire silicon band gap for defect centres, both p-type (B-doped) and n-type (P-doped) float zone monocrystalline silicon samples were ion implanted with sodium. Three Na-related levels were identified in the upper half of the band gap at E C − 0.094 eV, E C − 0.119 eV and E C − 0.139 eV in implanted n-type silicon. In implanted p-type silicon three Na-related levels were identified at E V + 0.088, E V + 0.270 eV and E V + 0.139 eV. The capture cross sections of all levels were in the range 2-5 × 10 −15 cm 2 , with an exception for the level at E V + 0.270 eV that was found to have a capture cross section of 4 × 10 −14 cm 2 . Implantations of sodium lead to a significant drop in minority carrier lifetime of both n-type and p-type silicon. This degradation was substantially higher in p-type silicon. The observed recombination activity can be compared to that of nickel and manganese.

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Section: Sodium-related Defect Centres In N-type Siliconmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electrically active sodium-related defect centres in silicon

Dahl

Madsbøll

Soiland

et al. 2013

Semicond. Sci. Technol.

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“…Recently, the element sodium has attracted more attention in materials modification, especially biomaterials [1][2][3][4][5] and nano-electronic materials. [6][7][8][9] For instance, nickel titanium (NiTi) shape memory alloys are used in many biomedical applications including actuators, orthodontic arch wires, and cardiovascular stents due to the shape memory effect. 10 However, wider clinical applications have been hampered by the high toxic nickel content.…”

Section: Introductionmentioning

confidence: 99%

A novel method for effective sodium ion implantation into silicon

Chu

2012

Review of Scientific Instruments

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Although sodium ion implantation is useful to the surface modification of biomaterials and nano-electronic materials, it is a challenging to conduct effective sodium implantation by traditional implantation methods due to its high chemical reactivity. In this paper, we present a novel method by coupling a Na dispenser with plasma immersion ion implantation and radio frequency discharge. X-ray photoelectron spectroscopy (XPS) depth profiling reveals that sodium is effectively implanted into a silicon wafer using this apparatus. The Na 1s XPS spectra disclose Na(2)O-SiO(2) bonds and the implantation effects are confirmed by tapping mode atomic force microscopy. Our setup provides a feasible way to conduct sodium ion implantation effectively.

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