Characterization of sharp interfaces and delta doped layers in semiconductors using secondary ion mass spectrometry

Dowsett, M. G.; Barlow, R. D.

doi:10.1016/0003-2670(93)e0568-r

Cited by 43 publications

(53 citation statements)

References 71 publications

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“…6e. The latter phenomenon may explain the sometimes found weak dependence of u on outer parameters such as the primary ion energy [6]. Deviations from non-ideal delta layer structures of the kind assumed in Fig.…”

Section: The Upslope Length U (In Uds) and The Information Depth Paramentioning

confidence: 93%

“…The analytical response function of Dowsett et al [5][6][7] In SIMS, the signal acquired for analysis is quite different from AES and XPS, where the surface left after sputter removal is analyzed [1]. Therefore, for homogenous samples in steady state sputtering, AES or XPS detect a surface composition that is modified by preferential sputtering [1] (e.g.…”

Section: The Analytical Depth Resolution Function Of the Mri Modelmentioning

confidence: 98%

“…A different analytical depth resolution function for SIMS was given by Dowsett et al [5][6][7] which is discussed and compared with Eq. (2) in the following.…”

Section: The Analytical Depth Resolution Function Of the Mri Modelmentioning

confidence: 99%

See 2 more Smart Citations

Analytical and numerical depth resolution functions in sputter profiling

Hofmann

Liu

Wang

et al. 2014

Applied Surface Science

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Section: The Upslope Length U (In Uds) and The Information Depth Paramentioning

confidence: 93%

Section: The Analytical Depth Resolution Function Of the Mri Modelmentioning

confidence: 98%

See 1 more Smart Citation

Analytical and numerical depth resolution functions in sputter profiling

Hofmann

Liu

Wang

et al. 2014

Applied Surface Science

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“…This shoulder may be due to (i) a real distribution or (ii) it could be the result of nonuniform sputtering, especially at the crater edges. 25 We think it is real because it appears identical in all the experiments, whereas the effects of nonuniform sputtering would be variable. Moreover, the atomic force microscopy (AFM) pictures of the bottoms of the craters show us a very flat surface in every crater but with slightly different appearance (¾1-nm pits in the 300-eV case), so the shoulder is not an artifact of ion beam-induced roughness.…”

Section: Resultsmentioning

confidence: 95%

Application of ultra low energy (ULE) SIMS to emerging diamond technologies

Mata

Dowsett

Tajani

et al. 2006

Surface & Interface Analysis

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We report ultra low energy secondary ion mass spectrometry (ULE-SIMS) analysis of a single crystal boron delta-doped diamond layer with normal incidence O 2 + beam at incident energies of 300 eV, 500 eV and 1 keV. The diamond layer was epitaxially grown using a chemical vapor deposition (CVD) method on a synthetic single crystal diamond substrate grown using a high-temperature, high-pressure technique. The good crystalline quality of the homoepitaxal boron delta-doped layer has allowed the study of the ULE-SIMS measurement process.In contrast to the case of silicon, the transient effects on the sputter yield are very weak: we obtained a differential shift of 0.6 nm/keV -smaller than the depth measurement uncertainty (i.e. the initial erosion rate is marginally slower).The boron ion yield is independent of the incident energy and the decay length is almost so (3.0, 3.1 and 3.5 nm for 300 eV, 500 eV and 1 keV respectively), reflecting a good depth resolution possibly limited by sample structure.The erosion rate is energy independent over a wide range, but carbon ion yields are both energy and boron concentration dependent for high boron concentrations, proportional to (Y B + ) 0.85 . For this reason, care is needed with the boron quantification when the boron content is high.

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“…The fitting can be facilitated further by modeling the energydependent response function terms ρ u/d as simple power laws of the form [20,23,24]:…”

Section: Simsmentioning

confidence: 99%

Si_1-xGe_x/Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing

Morris

Hase

Sanchez

et al. 2016

J. Am. Soc. Mass Spectrom.

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Abstract. The utility of energy sequencing for extracting an accurate matrix level interface profile using ultra-low energy SIMS (uleSIMS) is reported. Normally incident O 2 + over an energy range of 0.25-2.5 keV were used to probe the interface between Si 0.73 Ge 0.27 /Si, which was also studied using high angle annular dark field scanning transmission electron microscopy (HAADF-STEM). All the SIMS profiles were linearized by taking the well understood matrix effects on ion yield and erosion rate into account. A method based on simultaneous fitting of the SIMS profiles measured at different energies is presented, which allows the intrinsic sample profile to be determined to sub-nanometer precision. Excellent agreement was found between the directly imaged HAADF-STEM interface and that derived from SIMS.

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Characterization of sharp interfaces and delta doped layers in semiconductors using secondary ion mass spectrometry

Cited by 43 publications

References 71 publications

Analytical and numerical depth resolution functions in sputter profiling

Analytical and numerical depth resolution functions in sputter profiling

Application of ultra low energy (ULE) SIMS to emerging diamond technologies

Si_1-xGe_x/Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing

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Characterization of sharp interfaces and delta doped layers in semiconductors using secondary ion mass spectrometry

Cited by 43 publications

References 71 publications

Analytical and numerical depth resolution functions in sputter profiling

Analytical and numerical depth resolution functions in sputter profiling

Application of ultra low energy (ULE) SIMS to emerging diamond technologies

Si1-xGex/Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing

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Product

Resources

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Si_1-xGe_x/Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing