Characterization of <scp>AlGaN</scp>/<scp>GaN</scp> based <scp>HEMT</scp> for low noise and high frequency application

Dubey, Shashank Kumar; Mishra, Meenal; Islam, Aminul

doi:10.1002/jnm.2932

Cited by 18 publications

(5 citation statements)

References 32 publications

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“…The unity gain cut off frequency (f T ) is the vital figure-of-merit (FOM) of the AlGaN/GAN based MOSHEMT performance and it can be related to transconductance and capacitance as [36]…”

Section: F Unity Gain Cut-off Frequency Model For Ferro Pzt Al 2 O 3 ...mentioning

confidence: 99%

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

et al. 2023

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In this paper we have developed an analytical model for Ferro PZT Al 2 O 3 /AlGaN/AlN/GaN MOSHEMT involving the solution of Poisson and Schrödinger equations. This analytical model covers most of the operating regimes of the Ferro PZT MOSHEMT. The two-dimensional electron gas (2-DEG) sheet charge density (n s ), threshold voltage (V th ), drain current (I ds ), gate capacitance (C gs and C gd ), and unit gain cut-off frequency(f T ) model equations are generated and simulated with MATLAB tool. It is also observed that the insertion of the Ferro Pb(Zr, Ti)O 3 PZT (lead zirconium titanate) material can also improve the device performance. The proposed Ferro PZT MOSHEMT model accurately produces a higher drain current of 1.14A/mm , a high transconductance of 362S/mm, the gate-to-source capacitance of 50.99pF, the gate-to-drain capacitance of 38.25pF, and high cut-off frequency of 0.033THz for 20nm AlGaN barrier layer. The proposed model results show good agreement with the TCAD-Atlas simulation results and were satisfactory for the different AlGaN barrier layer thickness. The generated model and simulation results show the potential of using the Ferro PZT MOSHEMT for high-power and RF/Microwave applications.

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“…The unity gain cut off frequency (f T ) is the vital figure-of-merit (FOM) of the AlGaN/GAN based MOSHEMT performance and it can be related to transconductance and capacitance as [36]…”

Section: F Unity Gain Cut-off Frequency Model For Ferro Pzt Al 2 O 3 ...mentioning

confidence: 99%

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

et al. 2023

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“…This quantum well effectively captures a large number of electrons, leading to the formation of a two-dimensional electron gas (2DEG) that is confined to a narrow layer parallel to the interface. The electron concentration within this 2DEG can reach remarkably high values, reaching up to 1e13 cm -2 .This unique characteristic of the AlGaN/GaN HEMT structure holds significant importance, especially in high-frequency and highpower applications [5]. One of the key advantages is the minimal impurity scattering of electrons within this potential well.…”

Section: Introductionmentioning

confidence: 98%

Stepped ohmic structure of AlGaN/GaN HEMT with lower off-state leakage current

Li,

Wu,

et al. 2024

J. Phys.: Conf. Ser.

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Utilizing the TCAD-ATLAS platform, we performed accurate fitting of the electrical characteristics of GaN HEMT devices, achieving a fitting error of less than 5%. Building upon this parameter fitting, we introduced a stepped ohmic structure and compared it with the conventional rectangular structure. The findings highlight the significant impact of the ohmic structure on the off-state drain leakage current of the device. Through the implementation of the stepped ohmic structure, a remarkable reduction in the off-state leakage current was achieved. Specifically, the off-state leakage current decreased by three orders of magnitude, declining from 10−5 mA/mm to 10−8 mA/mm. Importantly, this improvement in leakage current was accomplished without adversely affecting the device’s output characteristics. These results underscore the effectiveness of the stepped ohmic structure in enhancing the overall performance of GaN HEMT devices.

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“…5G & 6G applications [8][9][10], mm-wave circuits [6,11], sensing applications [12], lowtemperature applications [13][14][15], integrated circuits [16] and a variety of other use cases [17,18] demand highspeed high-frequency devices for higher performance and efficiency. Many researchers have investigated the HEMT for various applications [19][20][21][22][23][24][25][26][27][28] as discussed above but still improvement is required for better device performance. Our device slots brilliantly into all these use cases with its performance characteristics as are discussed in section 3.…”

Section: Introductionmentioning

confidence: 99%

Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications

Nandi,

Dubey,

Kumar

et al. 2024

Eng. Res. Express

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This work proposes a new 100 nm InP based InGaAs-InAs-InGaAs composite channel HEMT for millimetre wave applications. The usage of an ultra-thin 2 nm barrier layer, unique composite channel topology and III-V material selection provides superior electron confinement in the channel, enhancing 2DEG concentration and hence, mobility and speed of the proposed device. We achieve a unity current gain frequency (fT) of 248.9 GHz and a maximum oscillation frequency (fMAX) of 523.9 GHz with a current gain of 67.7 dB at 0.1 GHz. Off-state leakage current is in the nanoampere range with minimum noise figure (NFMIN) of only 0.76 dB at 10 GHz. We compare the DC and RF performance and the associated parasitics of different composite channel HEMTs proposed in latest works and mathematically justify why InGaAs-InAs-InGaAs channel HEMTs provide the highest fTand fMAX. InGaAs-InAs-InGaAs channel HEMTs provide 1.4 times better fTand fMAX with only half the NFMINof their InGaAs-InP-InGaAs channel counterparts. A frequency dependent intrinsic FET model is put forward for the proposed HEMT which allows us to model the behavior of the device under varying RF conditions and identify the effect of individual parameters on the entire system.

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Characterization of AlGaN/GaN based HEMT for low noise and high frequency application

Cited by 18 publications

References 32 publications

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

Stepped ohmic structure of AlGaN/GaN HEMT with lower off-state leakage current

Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications

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