Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

Abstract

Physical and electrical properties of metal gate electrodes on HfO 2 gate dielectrics

Characterizing individual SnO2 nanobelt field-effect transistors and their intrinsic responses to hydrogen and ambient gases

“…On the other hand, we consistently obtain good Ohmic contacts with pulsed laser deposition of RuO 2 (w200 nm) at room temperature [37,38], followed by a layer of Au (w100 nm) via thermal evaporation, which was used to facilitate wire bonding. Consistent formation of Ohmic contacts here is likely due to the metallic behavior of RuO 2 (work function of 5.1 eV [39,40]) and the limitations of interfacial diffusion and reaction at the SnO 2 /RuO 2 interface.…”

Photoemission study of energy-band alignment for RuOx∕HfO2∕Si system

“…9,10 As an alternative gate electrode for integration with high-ZrO 2 and Zr silicate dielectrics in PMOS devices, excellent stability and electric properties indicated that RuO 2 is a promising candidate for implementation in PMOS devices. 11,12 However, detailed information on the work function of conductive oxides relating to the oxidation state is very limited. 13 When integrating them with alternative high-dielectrics, the unknown band alignment may result in unpredictable electrical properties.…”

Ruthenium Films Deposited by Liquid‐Delivery MOCVD Using Bis(ethylcyclopentadienyl)ruthenium with Toluene as the Solvent

“…[3] Ruthenium-based electrode materials have demonstrated excellent thermal stability not only on silicon dioxide (SiO 2 ), but also on high-dielectric constant (k) materials, such as zirconium oxide (ZrO 2 ), Zr silicates, and yttrium silicates. [4][5][6] Additionally, Ru electrodes for perovskite-based (e.g., Ba x Sr 1-x TiO 3 , PbZr x Ti 1-x O 3 , and SrBi 2 Ta 2 O 9 ) capacitors in random access memories have been the subject of great attention worldwide. Among the various thin-film-deposition techniques in the microelectronics industry, the potential advantages of MOCVD include thickness uniformity over large substrate areas, good conformity or step coverage in complex features, and a high throughput for commercial-scale production.…”