1982
DOI: 10.1080/01418638208224023
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Characterization of radiative recombination in amorphous silicon by optically detected magnetic resonance: Part I

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Cited by 37 publications
(21 citation statements)
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“…The corresponding resonance ('h signal') has been investigated in the past using EDMR [25,28,30] and optically detected magnetic resonance (ODMR) revealing g = 2.011 to 2.013 [31][32][33]. In the solar cells C and D (a-Si:H p-layer) we found a signal at g h = 2.011 which we assign to valence band tail states in a-Si:H. No evidence of boron acceptor states could be found.…”
Section: P-doped A-si:hmentioning
confidence: 99%
“…The corresponding resonance ('h signal') has been investigated in the past using EDMR [25,28,30] and optically detected magnetic resonance (ODMR) revealing g = 2.011 to 2.013 [31][32][33]. In the solar cells C and D (a-Si:H p-layer) we found a signal at g h = 2.011 which we assign to valence band tail states in a-Si:H. No evidence of boron acceptor states could be found.…”
Section: P-doped A-si:hmentioning
confidence: 99%
“…Over the years, optically detected magnetic resonance (ODMR) has proven to be a powerful tool for the study of spindependent recombination and dissociation processes, both in inorganic [1][2][3] and in organic [4] semiconductors. High sensitivity, exceeding the sensitivity of conventional electron spin resonance by about 6 orders of magnitude, renders ODMR the tool of choice when it comes to π -conjugated polymers [4], where the density of spin carriers is small.…”
Section: Introductionmentioning
confidence: 99%
“…ODMR has been used in a wide range of research areas since its first invention 3,4 . ODMR and EDMR are about 8 to 9 orders more sensitive than ESR, they both are proven to have single spin sensitivity 2,5-8 , and they both can directly link a paramagnetic center to a specific luminescence center [5][6][7]9 . Thanks to these advantages, ODMR can be used to deconvolute unresolved, overlapping luminescence bands in semiconductors 10 .…”
Section: Introductionmentioning
confidence: 99%
“…Thus ESR can alter recombination rate which results in change in photoluminescence and photocurrent, and they can be detected optically and electrically, respectively. variety of defect states which influence recombination in aSi 6,7,10,[13][14][15][16] .…”
Section: Introductionmentioning
confidence: 99%