Characterization of phosphorus-doped homoepitaxial (100) diamond films grown using high-power-density MWPCVD method with a conventional quartz-tube chamber

Electron Spectroscopic Determination of Electronic Structures of Phosphorus-Doped n-Type Heteroepitaxial Diamond (001) Surface and Junction

“…The homoepitaxial CVD growth of P-doped n-type diamond (001) using TMP has been adopted to achieve reasonable crystallographic and electronic properties of n-type diamond (001). 4,5) A liquid TBP source has also been used to achieve reasonable properties of homoepitaxial n-type diamond (001). 6,7) The heteroepitaxial CVD growth of P-doped n-type diamond (001) using TMP has also been adopted, which may provide a route to the production of large-size diamond electronic devices.…”

Substrate temperature optimization for heavily-phosphorus-doped diamond films grown on vicinal (001) surfaces using high-power-density microwave-plasma chemical-vapor-deposition

“…Since the areal intensities of BE NP and BE TO peaks for the P-doped sample grown at 1160 1C were higher, compared to that grown at 1010 1C, as mentioned above, it is found that the relative amount of the incorporated H atoms to the incorporated P atoms should substantially contribute to determine the efficiency that the substitutional P atoms work as the donors. The volume densities of the incorporated P atoms for the P-doped layer similarly grown at 1160 1C on the "just" substrate (with a misorientation angle o 0.3 degree) was only E 5.9 Â 10 17 cm À 3 [23], indicating that the crystalline steps on (001) surface should play an important role on the P-doping diamond growth on (001) surface using the present MWPCVD. On the other hand, the BE NP and BE TO peaks were not observed in the CL spectra for the P-doped diamond film grown at 1180 1C, as shown in Fig.…”

Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth

“…In our laboratory, we have reached the state of the art of the RT electron mobilities (350 cm 2 /V s for 6 Â 10 17 P/cm 3 [18]) by combining two technologies on our prototype reactor: the MPCVD, for the diamond growth, and the metalorganic CVD (MOCVD) for the diamond doping with organic compounds [21]. In the case of the (1 0 0) orientation, only three groups have succeeded, up to now, to obtain phosphorus donors in diamond [20,22,23]. On the phosphorus doping point of view, the main differences between these two orientations are: (i) the low P incorporation efficiency ( $ 1000 times less on (1 0 0) than on (1 1 1)), (ii) the compensation ratio (between 50% and 100% on (1 0 0) to be compared with 10% on (1 1 1)) and (iii) the P donor fraction (ratio between the concentration of P atoms acting as donors and the incorporated P concentration).…”