Abstract:In this work we investigate the electrical properties of PbTe p − n + junction. Mesa diodes were fabricated from p − n + PbTe layers grown on (111) BaF 2 substrates by molecular beam epitaxy. From the analysis of the current versus voltage characteristic measured at 80K, the incremental differential resistance and the series resistance were determined. The capacitance versus voltage curves were measured at a frequency of 1MHz. The one-sided abrupt junction was checked through the 1/C 2 xV plot. From the linear… Show more
“…Other techniques previously used to grow PbTe thin films have included molecular beam epitaxy [21,22], chemical vapor deposition [23,24], pulsed laser deposition [25,26] and hot-wall epitaxy [15]. One of the major drawbacks of these techniques is the use of high temperatures for the growth of films which results in heatinduced interdiffusion [27] of elements in adjacent structure layers, which can degrade deposit quality.…”
“…Other techniques previously used to grow PbTe thin films have included molecular beam epitaxy [21,22], chemical vapor deposition [23,24], pulsed laser deposition [25,26] and hot-wall epitaxy [15]. One of the major drawbacks of these techniques is the use of high temperatures for the growth of films which results in heatinduced interdiffusion [27] of elements in adjacent structure layers, which can degrade deposit quality.…”
“…This result indicates that for electron concentration higher than 10 18 cm −3 , a onesided abrupt PbTe junction is formed with the depletion region located practically at the p side. For this type of junction, the hole concentration can be determined by the slope of the 1/C 2 e xV plot and the depletion width can be obtained from the CxV characteristic [5].…”
Section: C×v Characteristicsmentioning
confidence: 99%
“…The current versus voltage characteristics of all diodes were measured in a self-assembled automatic system composed of a programmable power supply, an ammeter and a voltmeter [5]. Fig.…”
Section: Ixv Characteristicsmentioning
confidence: 99%
“…The photodiodes are normally made from PbTe layers grown on BaF 2 substrates or on Si substrates using fluoride buffer layers. With device performance comparable to the metal Schottky barriers, PbTe p − n junctions have recently attracted attention as infrared sensors [3][4][5]. It is well known that the electrical characteristics of the p-n junction strongly influence the detector performance.…”
PbTe mesa diodes were fabricated from a series of p − n junctions grown on BaF 2 substrates. For this series, the hole concentration was kept constant at 10 17 cm −3 and the electron concentration varied between 10 17 and 10 19 cm −3 . Capacitance versus voltage analysis revealed that for n > 10 18 cm −3 , a one-sided abrupt junction is formed. The direct and reverse branches of the current versus voltage curves exhibited different forms among the diodes. The R 0 A product varied between 0.23 and 31.8 Ωcm 2 , and the integral detectivity ranged from 1.1x10 8 to 6.5x10 10 cmHz 1/2 W −1 . The performance of the best PbTe photodiodes fabricated here is comparable to the commercial InSb and HgCdTe infrared detectors, and to the PbTe sensors grown on Si substrate.
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