Formation of PbTe nanofilms by electrochemical atomic layer deposition (ALD)

Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

“…For Bi 2 Se 3 compound, they mean not only complicated apparatus but also very expensive precursors and some toxic byproducts. Recently, a novel method named as electrochemical atomic layer epitaxy (ECALE), put forward by Gregory and Stickney [10][11][12], was proposed as an approach for high crystalline and ultrathin film deposition, especially in the formation of heterogeneity such as superlattice. ECALE is the electrochemical analogue of atomic layer * Corresponding author.…”

“…IIIA-VA compound GaAs [17], InAs [18] as well as IIIA-VIA compound In 2 Se 3 [19], IVA-VIA compound PbSe [11], PbTe [12], VA-VIA [20,22] compounds and superlattices of InAs/InSb [23], CdS/CdSe [24], PbTe/PbSe [25], and Bi 2 Te 3 /Sb 2 Te 3 [26] have also been prepared by ECALE. However, to our knowledge, the deposition of Bi 2 Se 3 compound, as an important thermoelectric material, has not been investigated with ECALE yet.…”

Synergetic Effects of Al3+ Doping and Graphene Modification on the Electrochemical Performance of V2O5 Cathode Materials

“…PbSe/PbTe thin‐film superlattices with modulation wavelengths (periods) could be fabricated by electrochemical ALD 178. In 2008, the technique was optimized for the deposition of smooth epitaxial lead telluride nanofilms 179. In 2009, Yang et al180 reported the synthesis of antimony sulfide and antimony selenide nanowires using an original pulsed vapor‐liquid‐solid (VLS) growth mode (ALD and the VLS growth mechanism were combined).…”

Electroformation of Pd‐modified Thin Film Electrocatalysts Using E‐ALD Technique

“…However, these methods promote nucleation and growth which prohibit optimal control over the growth and conformity of thin films [19]. The thin film growth deposition requireres the epitaxial methods, such as; chemical vapour deposition (CVD), metal‐organic chemical vapour deposition (MOCVD), molecular beam epitaxy (MBE), and electrochemical atomic layer deposition (E‐ALD) [20–21]. These methods allow monolayer deposition, one atomic layer, at a time through surface limited reactions.…”