PbTiO 3 thin films were deposited on Si and Ru substrates by atomic layer deposition (ALD) at a substrate temperature of 200 o C using H 2 O and O 3 as oxidants. When H 2 O was used as the oxidant for both Pb-and Ti-precursors, film growth was most effective under the PbO vs. TiO 2 growth cycle ratio where stoichiometry (Pb/Ti concentration ratio = 1) of the film could be achieved. The previously reported catalytic effect observed in the PbTiO 3 ALD process was attributed to the enhanced growth of the component oxide layer, i.e. PbO and TiO 2 , by previously formed stoichiometric PbTiO 3 phase. On the other hand, when H 2 O and O 3 were used for Pb-and Ti-precursors, respectively, the growth rate increased with increasing PbO vs. TiO 2 growth cycle ratio. This was attributed to the effects of O 3 used for the Ti-precursor on the adsorption of Pb-precursor during the subsequent PbO growth step.