2006
DOI: 10.1149/1.2186038
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Characterization of Pb[sub x]Pt[sub y] Alloy Formation on a Pt Substrate during Liquid-Delivery MOCVD of Pb(Zr,Ti)O[sub 3] Thin Films

Abstract: Pb x Pt y alloy formation and its influence on Pb͑Zr,Ti͒O 3 ͑PZT͒ film growth during liquid-delivery metallorganic chemical vapor deposition ͑MOCVD͒ of ferroelectric PZT thin films on Pt electrodes are investigated. When an excessive amount of Pb precursor and a deficient amount of oxygen are supplied during MOCVD at temperatures near 550°C, Pb diffuses along the grain boundaries into the Pt substrate, causing the formation of an alloy layer. Compared to a thicker Pt electrode ͑150 nm͒, a thinner Pt substrate … Show more

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Cited by 8 publications
(3 citation statements)
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“…Pt and Ir were usually used as the electrode of the ferroelectric capacitor. However, Pt electrode formed Pb x Pt y alloy at the interface with the PTO (or PZT) film (13). Ir electrode is suitable for the ALD and MOCVD processes of the ferroelectric thin films but the CVD and ALD processes for Ir electrode have not been developed to the level which is sufficient for its application to the semiconductor device fabrication.…”
Section: Methodsmentioning
confidence: 99%
“…Pt and Ir were usually used as the electrode of the ferroelectric capacitor. However, Pt electrode formed Pb x Pt y alloy at the interface with the PTO (or PZT) film (13). Ir electrode is suitable for the ALD and MOCVD processes of the ferroelectric thin films but the CVD and ALD processes for Ir electrode have not been developed to the level which is sufficient for its application to the semiconductor device fabrication.…”
Section: Methodsmentioning
confidence: 99%
“…This was reported in detail in a separate paper. 22 The variation in the Zr ratio depending on the types of electrodes should be noted ͑Fig. 7b͒.…”
Section: Growth and Ferroelectric Properties Of Pzt Films On Amorphou...mentioning
confidence: 99%
“…Liquid delivery metalorganic chemical vapor deposition (LD-MOCVD) has been researched and developed as a fabrication technique for ferroelectric thin films. [1][2][3][4][5][6][7][8][9][10][11] However, notwithstanding its capacity for high-quality thin film formation, the LD-MOCVD system is highly complex and requires continuous maintenance for stable operation. The most important subjects to be developed related to LD-MOCVD techniques are the vaporization system of liquid sources and the transport of vaporized source gases.…”
mentioning
confidence: 99%