Characterization of oxygen self-diffusion in TiO2 resistive-switching layers by nuclear reaction profiling

Abstract

Oxygen self-diffusion was investigated in TiO 2 layers employed for resistiveswitching memories using resonant nuclear reaction profiling (NRP) and 18 O labeling. The layers were grown using physical vapor deposition technique (sputtering) and were polycrystalline. The diffusivity was measured over the temperature range 600-800 • C and the activation energy for oxygen selfdiffusion in sputter-deposited TiO 2 films determined to be 1.09 ± 0.16 eV, a value consistent with results obtained by previous studies [1].