Characterization of oxide films by MeV ion beam techniques

Döbeli, M.

doi:10.1088/0953-8984/20/26/264010

Cited by 20 publications

(14 citation statements)

References 25 publications

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“…14,16 The film stoichiometries, normalized to the sum of cationic mole fractions, are Zr 0.93±0.01 Y 0.06±0.01 Hf 0.013±0.001 O 1.77-1.97±0.04 . Hafnium is detected as the only element in addition to Zr, Y and O, on a level of 1.6-2.0 wt.% which is common for zirconia-based compounds.…”

Section: Stoichiometry and Phase Composition Of 3ysz Filmsmentioning

confidence: 99%

Yttria-stabilized zirconia thin films by pulsed laser deposition: Microstructural and compositional control

Heiroth

Lippert

Wokaun

et al. 2010

Journal of the European Ceramic Society

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Section: Stoichiometry and Phase Composition Of 3ysz Filmsmentioning

confidence: 99%

Yttria-stabilized zirconia thin films by pulsed laser deposition: Microstructural and compositional control

Heiroth

Lippert

Wokaun

et al. 2010

Journal of the European Ceramic Society

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“…As E 1 is an unambiguous function of M 2 , the elemental composition of the film can be obtained from the energy spectra [61]. RBS is especially suited to detect heavy elements, since the differential cross-section, which describes the probability of observing a scattering event, is proportional to the square of the atomic number of the target atom.…”

Section: Rutherford Backscattering and Time Of Flight Elastic Recoil mentioning

confidence: 99%

Deep level related photoluminescence in ZnMgO

Trunk

Venkatachalapathy

Galeckas

et al. 2010

Applied Physics Letters

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Zinc oxide (ZnO) has been used in a wide range of products for many years, including, among others, varistors, surface acoustic wave devices and cosmetics. Besides these established applications, ZnO and its ternary alloys are now also being considered as potential materials for optoelectronic applications, such as light emitting diodes, photovoltaics, sensors, displays, etc. Unlike other materials, which could be used alternatively, ZnO has the advantage of being inexpensive, chemically stable and relatively plentiful. In spite of the long research history, fabrication of defect free ternary alloys and stable p-type ZnO is still challenging. The aim of this work was therefore to provide a better understanding of ZnO ternary alloys, so that -based on the gained knowledge -their optical properties can be further improved and, in a second step, optoelectronic applications based on these materials can soon be commercialized. The work carried out in this thesis was two-fold: the first part aimed at identifying the origin of defect related luminescence phenomena in ZnMgO, and the second part was dedicated to the exploration of a novel ZnCdO-based heterostructure photovoltaic applications.In the case of ZnMgO, luminescence properties of deep level defects were studied by photoluminescence (PL) spectroscopy and a model was proposed to explain the changes in the deep band emission with increasing Mg content. In this model, the observed trends can be understood by considering interaction of native zinc and oxygen defects of the ZnO sublattice with Mg interstitials (Mg i ). In summary, the deep level bands at 3.0 and 2.8 eV, which show a blueshift with increasing Mg content, were assigned to free-to-bound type transitions between zinc interstitials (Zn i ) with the valence band edge and between the conduction band edge with zinc vacancies (V Zn ), respectively. A red band at 2.0 eV, which does not show an apparent shift of the peak energy for increasing Mg content, is associated with the oxygen vacancies (V O ). Two luminescence bands at 2.3 and 2.5 eV, which are redshifted for higher Mg concentrations, were assigned to transitions between zinc and oxygen interstitials and between zinc interstitials and zinc vacancies, respectively. The redshift is interpreted in terms of a competing supply of electrons from slightly deeper Mg i donor states. The ZnMgO band gap diagram, which the model is based on, has contributed to gain valuable information about the nature of the deep defects both in ZnO and ZnMgO and is therefore of fundamental interest.In the second part of this work, focused on ZnCdO, a stacked heterostructure was designed for iii iv Abstract application in a photoelectrochemical cell, which is used for hydrogen production by photoelectrolysis using the semiconductor as an absorber. Optical and photoelectrochemical measurements led to the conclusion that the optical emission band for the ZnCdO heterostructures is broadened compared to a ZnO single layer. The broadened emission could be explained by combined ...

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“…The chemical composition was determined using Rutherford Backscattering Spectroscopy (RBS) and Particle Induced X-ray Emission (PIXE) [25]. RBS was performed with a 5 MeV He-4 beam in order to be able to separate Gd and Ce.…”

Section: Microstructural and Chemical Characterizationmentioning

confidence: 99%

Gadolinia Doped Ceria Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition and Applications in Intermediate‐Temperature Solid Oxide Fuel Cells

et al. 2013

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Furthermore, deposition at such low temperatures is promising for processing of thin film assemblies.The preparation of bi‐layer electrolytes of yttria stabilized zirconia and gadolinia doped ceria thin films by aerosol assisted chemical vapor deposition is demonstrated. Gadolinia doped ceria films as thin as 150 nm are applied as barrier layers between yttria stabilized zirconia electrolyte and La0.6Sr0.4CoO3–δ cathode in anode supported solid oxide fuel cells. High power densities above 850 mW cm–2 at 650 °C are only obtained with these barrier layers, indicating that the GDC thin films effectively inhibit the formation of unwanted interface reactions.

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Characterization of oxide films by MeV ion beam techniques

Cited by 20 publications

References 25 publications

Yttria-stabilized zirconia thin films by pulsed laser deposition: Microstructural and compositional control

Yttria-stabilized zirconia thin films by pulsed laser deposition: Microstructural and compositional control

Deep level related photoluminescence in ZnMgO

Gadolinia Doped Ceria Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition and Applications in Intermediate‐Temperature Solid Oxide Fuel Cells

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