Characterization of nonlinear behavior of GaAs HFET power amplifier IC based on multitone measurement and simulation

Saripudin, Aip; Hutabarat, Mervin T.; Alam, Basuki Rachmatul

doi:10.1109/apccas.2002.1115246

Cited by 2 publications

(1 citation statement)

References 5 publications

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“…The rapid growth of broadband telecommunication with higher power transmission have increased concern of the linearity of devices in RF wireless communication systems [1,2]. RF Transistor, either MOSFET or Bipolar transistor, as a RF amplifier, inherently has linear and non-linear characteristics.…”

Section: Introductionmentioning

confidence: 99%

The effect of bias and load impedance to non linearity characteristics of RF LD-MOSFET

Alam

Saripudin

Armanto³

et al. 2011

Proceedings of the 2011 International Conference on Electrical Engineering and Informatics

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LD MOSFET as large signal RF power amplifier has been characterized and modeled for high power and broadband RF amplifier. Large signal model has been derived and verified based on I-V characteristics and S-parameter data. Non-linier model has been used to model LD MOSFET large signal characteristics. Good fit of measured and simulation results of LD MOSFET I-V characteristics as well as S-parameter curves verified large signal model and extracted model parameters. The effect of transistor biases, V GS and V DS to 2nd (IM2) and 3rd order (IM3) intermodulation distortion of LD-MOSFET (D2081UK) relative to fundamental output power have been obtained and verified. Highest level of IM3 was shown at V GS = 1,6 V near threshold voltage (V TH = 1,4 V) and minimum level of IM3 at V GS = 2 V, at input power, P in , of -30 dBm and load impedance, R L = 50 Ω. While the effect of V DS shows maximum of IM3 at knee voltage and declining level at higher V DS . The effect of varying load impedance, R L , to IM3, IM2 and fundamental levels has shown minimum dip of IM3 at R L = 31 Ω with gradual increase as load increasing above 50 Ω. The intersection point of 3rd order intermodulation (IP3) at V GS = 2.2V shows higher power level of IP3=50dBm with input power of 18dB than level at V GS = 1.8V with IP3 of 46dBm. This behaviour of non-linearity effect of the transistor was verified and evaluated based on the large signal model of LD MOSFET device. Analysis of non-liniearity behavior based on LD MOSFET device structure and physics was carried out in comprehending the origin of non-linearity and in the implementation of linearization method.

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Section: Introductionmentioning

confidence: 99%