Abstract:LD MOSFET as large signal RF power amplifier has been characterized and modeled for high power and broadband RF amplifier. Large signal model has been derived and verified based on I-V characteristics and S-parameter data. Non-linier model has been used to model LD MOSFET large signal characteristics. Good fit of measured and simulation results of LD MOSFET I-V characteristics as well as S-parameter curves verified large signal model and extracted model parameters. The effect of transistor biases, V GS and V D… Show more
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