Characterization of MOS structures with buried layers

Fahrner, W. R.; Klausmann, E.

doi:10.1002/pssa.2210500210

Cited by 9 publications

(2 citation statements)

References 14 publications

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“…The first one is given by the natural inversion channel in a p-type metal-oxide-semiconductor ͑MOS͒ sample; 12 the second one is observed in a thin counterdoped layer underneath an MOS oxide. 13 Because even the more recent publication dates back to 1978, we will briefly repeat below the derivation of the equations for the admittance. For simplicity, a circular input area ͑the solar cell͒ of radius r D is assumed.…”

Section: G820mentioning

confidence: 99%

Admittance Measurements on a-Si/c-Si Heterojunction Solar Cells

Fahrner¹,

Goesse²,

Scherff³

et al. 2005

J. Electrochem. Soc.

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Hydrogenerated amorphous silicon/crystalline silicon ͑a-Si:H/c-Si͒ solar cells with areas of 1 ϫ 1 cm are produced by deposition of a-Si:H and indium-tin-oxide ͑ITO͒ on 3-in. wafers. Three types of samples have been prepared for admittance measurements, differing in the way how the effective area is defined. The measurement geometry is either defined by cutting, by etching the ITO layer outside the 1 cm 2 active area, or by etching the ITO and the a-Si:H outside the active area. Admittance measurements reveal that the lateral conductivity of the ITO is high enough up to a frequency of 1 MHz to ensure a lateral equipotential surface. A simple equivalent network consisting of a parallel resistor-capacitor branch in series to a second resistor controls the cut sample. For the sample with just ITO layer etching, the effects of a lateral channel due to the a-Si:H layer have to be included. The finite dimensions of the sample modify the low-pass character of the channel. The sample with ITO and a-Si:H layer etching delivers the best measurement conditions. In all three cases the dispersion allows the surface doping level of the substrate to be extracted from the CV characteristics measured at 1 MHz.

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Section: G820mentioning

confidence: 99%

Admittance Measurements on a-Si/c-Si Heterojunction Solar Cells

Fahrner¹,

Goesse²,

Scherff³

et al. 2005

J. Electrochem. Soc.

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“…Note that the a( U ) peaks due to surface states do not exceed the usual amount whereas a strong dispersion not known in unimplanted samples is found in the accumulation regime. Two explanations might be attributed to this effect: either the occurrence of a built-in p-n junction due to a conductive buried layer and thus a lateral current contribution [3,4] or a high ohmic layer due to the damage induced by the implantation. Though the second explanation appears more likely, an exact answer to this problem can be given only by the analysis of the equivalent MOS network extended by the implantation.…”

Section: Mev Oxygenmentioning

confidence: 99%

Results of ion implantation into silicon in the 100 MeV range. II. Electrical properties

Fahkner

Heldemann

Schöttle

1982

phys. stat. sol. (a)

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Oxygen and carbon ions are implanted into MOS capacitors and Schottky diodes prior to metallization. For the MOS devices dispersion in the accumulation regime is found. The Schottky diodes show linear I(U) characteristics at forward bias. In either case this is found to be the consequence of a strongly damaged buried layer and by an annealing‐induced substitutional incorporation into the silicon lattice.

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Equivalent circuit for ion implanted counterdoped layers as determined by MOS admittance and crosstalk measurements

Bach

Fahrner

Bräunig

1981

Phys. Stat. Sol. (a)

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Counterdoping ion implantation of doses above loll cm-2 into MOS structures leads to the formation of a p-n junction close to the Si0,-Si-phase boundary. The hf-C( V ) curves of this structure show an additional frequency dispersion in the implanted layer accumulation regime. This dispersion is caused by the two-dimensional current propagation into the lateral channel and into the bulk of the silicon across the p -n junction underneath the gate electrode. The lateral current spread is described by an infinitely distributed equivalent network. The voltage and current along its components are calculated for a linear geometry of finite dimensions. The model is checked by the measurement of the input accumulation admittance and the measurement of the complex dot-to-dot crosstalk voltage. Identical values of sheet resistance, junction capacitance, and effective junction conductance are found for either method.Gegendotierende Ionenimplantation bei Dosen oberhalb loll cm-2 in MOS-Strukturen fuhrt zur Bildung eines p-n-ubergangs in der Nahe der Si0,-Si-Phasengrenze. Die HF-C( V)-Kurven dieser Struktur zeigen eine zusatzliche Frequenzdispersion im Akkumulationsbereich der implantierten Schicht. Diese Dispersion wird verursacht durch die zweidimensionale Stromausbreitung in den lateralen Kana1 und in das Silizium-Volumen uber den p-n-ubergang unter der Gate-Elektrode. Die laterale Stromausbreitung wird durch ein unendlich verteiltes aquivalentes Netzwerk bescbrieben. Die Spannung und der Strom entlang seiner Komponenten werden fur eine linewe Geometrie mit endlichen Abmessungen berechnet. Das Modell wird durch Messung der Anreicherungs-Eingangsadmittanz sowie der Messung der komplexen Ubersprechspannung von Punkt-zu-Punkt iiberpruft. Mit jeder Methode werden identische IVerte fur den Schichtwiderstand, die p-n-Kapazitat und den effektiven p-n-Leitwert gefunden. l )

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Characterization of MOS structures with buried layers

Cited by 9 publications

References 14 publications

Admittance Measurements on a-Si/c-Si Heterojunction Solar Cells

Admittance Measurements on a-Si/c-Si Heterojunction Solar Cells

Results of ion implantation into silicon in the 100 MeV range. II. Electrical properties

Equivalent circuit for ion implanted counterdoped layers as determined by MOS admittance and crosstalk measurements

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