2021
DOI: 10.1109/tpel.2020.3014529
|View full text |Cite
|
Sign up to set email alerts
|

Characterization of Low-Inductance SiC Module With Integrated Capacitors for Aircraft Applications Requiring Low Losses and Low EMI Issues

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
3
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
6
3
1

Relationship

1
9

Authors

Journals

citations
Cited by 29 publications
(8 citation statements)
references
References 41 publications
0
3
0
Order By: Relevance
“…More research explores the possibility of integrating more components of the EMI filter into the power module package in addition to the decoupling capacitors. In [58], [59], CM capacitors are added to the package and realize a good EMI attenuation. References [60], [61] not only include the CM capacitors but also integrate a CM inductor in the power module package as shown in Fig.…”
Section: Emi Filter Integrationmentioning
confidence: 99%
“…More research explores the possibility of integrating more components of the EMI filter into the power module package in addition to the decoupling capacitors. In [58], [59], CM capacitors are added to the package and realize a good EMI attenuation. References [60], [61] not only include the CM capacitors but also integrate a CM inductor in the power module package as shown in Fig.…”
Section: Emi Filter Integrationmentioning
confidence: 99%
“…This is made possible through advanced packaging technology, which enables the integration of passive filters and power modules. Reference [98] integrates CM capacitors into SiC modules to reduce conducted EMI. Similarly, to minimize the filter parasitic effects, Reference [99] integrates the CM filter with the CaN half-bridge power module, as shown in Figure 17.…”
Section: Optimization Of Power Densitymentioning
confidence: 99%
“…High-power-density design of power electronics converters requires accurate power losses analysis of SiC MOSFETs, especially switching losses [3]. High-speed operation of SiC MOSFETs increases the dv/dt and di/dt of the switching transients [4], which causes electromagnetic interference (EMI) problems to the converters [5].…”
Section: Introductionmentioning
confidence: 99%