Characterization of large off-axis EUV mirrors with high accuracy reflectometry at PTB

Abstract

CZ SMT AG produced large off-axis EUV mirrors as they are used e.g. in ASML's alpha demo tools, the predecessor for Extreme Ultraviolet Lithography (EUVL) production tools by ASML. The coating development and a large part of the actual coatings were done by the FOM-Institute. The Physikalisch-Technische Bundesanstalt (PTB) operates an EUV reflectometry facility at the electron storage ring BESSY II for at-wavelength metrology of full-size EUVL optics with a weight of up to 50 kg and a diameter of 550 mm. Critical issues for EUVL mirrors are the high reflectivity close to the theoretical limit, the matching of the period to the operating wavelength of the stepper (13.5 nm) and the imaging properties of the EUV optics. The full multilayer stack needs to be controlled laterally to such extend that the initial subnanometre surface figure of the substrate is preserved. The so-called added figure error should not exceed 100 pm in order to ensure faultless imaging at 13.5 nm wavelength. Here, we discuss representative results obtained at large offaxis EUV mirrors. We especially discuss the challenges of measurements at higher local angles of incidence according to the optical design and the accuracy needed in sample alignment for measurement of the coating profiles. PTB has shown excellent reproducibility for measurements of the near normal incidence reflectance of flat homogeneous mirrors over several years. For large off-axis EUV mirrors, measurements have to be done at angles significantly off normal, which dramatically increases the influence of angular alignment errors of the sample on the measured peak wavelength. Furthermore, according to the optical design, these optics have gradients of the coating thickness which require exact knowledge of the measurement position in the mirror coordinates. Extensive studies were done to estimate and validate the uncertainties connected to the sample alignment. Our results clearly show that it is possible to meet and verify the tight specifications for the lateral coating profiles of EUV multilayer mirrors. The non-correctable added figure error is significantly better than required and the overall reflectance of the coatings with a special protective capping layer is 65%.

Use of EUV scatterometry for the characterization of line profiles and line roughness on photomasks

“…The mechanical set-up of the EUV reflectometer for detector and sample manipulation is described elsewhere 1,3 . The sample stage can be moved in three directions and be rotated around three axes.…”

“…It should be noted that EUV scatterometry can also be applied to CoG and other non-EUV type masks while the short wavelength increases the sensitivity to small structural features, particularly roughness. PTB's EUV reflectometer 3 at the storage ring BESSY II allows full field surface scanning of semiconductor masks at 10 m positioning reproducibility. The probed area (photon beam size) is about 1 mm².…”

A quarter‐century of metrology using synchrotron radiation by PTB in Berlin

“…EUVL imaging at 13.5 nm wavelength requires reflective multilayer mirror optics being manufactured with extreme accuracy to ensure uniform illumination at the wafer plane and optimised throughput. Starting with the characterisation of the first EUV optical elements in 1990 [65,85], PTB has achieved substantial improvements in the repeatability and total measurement uncertainty during its long-term cooperation with its main industrial partners like Carl Zeiss SMT AG since 1998 [86]. As one example, Fig.…”

Optical metrology of micro- and nanostructures at PTB: status and future developments

“…PTB's EUV reflectometer [12] at the storage ring BESSY II allows mask surface scanning in Cartesian coordinates at 10 µm positioning reproducibility [13]. The probed area (photon beam size) is about 1 mm square.…”