Characterization of ion beam sputter deposited W and Si films and W/Si interfaces by grazing incidence X-ray reflectivity, atomic force microscopy and spectroscopic ellipsometry

Influence of Oxygen to Argon Ratio on the Structural and Morphological Properties of Nb-Doped SrTiO<sub>3</sub> Epitaxial Films Grown by Reactive Ion Beam Sputter Deposition

“…Electron-cyclotron-resonance ion beam sputter deposition (ECR-IBSD) has been demonstrated as a potential technique for fabricating complex oxide films with high crystalline quality and flat surface. It also provides several advantages, such as well-controlled ion energy and growth rate, low operating pressure, (~5 × 10 −5 -5 × 10 −4 Torr), good film adhesion, and ease of fab-rication of thin film over a large area [8,9]. The ECR ion source is a non-filament type, leading to a long lifetime and allowing for the use of various kinds of gas species [10].…”