Characterization of Intrinsic Field-Effect Mobility in TFTs by De-Embedding the Effect of Parasitic Source and Drain Resistances

Hur, Inseok; Bae, Hagyoul; Kim, Woojoon; Kim, Jaehyeong; Jeong, Hyun Kwang; Jo, Chunhyung; Jun, Sungwoo; Lee, Jae‐Wook; Kim, Yun Hyeok; Kim, Dae Hwan; Kim, Dong Myong

doi:10.1109/led.2012.2226424

Cited by 9 publications

(2 citation statements)

References 14 publications

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“…However, when Lov < LT, the contact resistance becomes much larger, because it is determined not only by the overlap resistance region with a higher gate-induced carrier concentration [33], but also by a spreading resistance a-IGZO region which has a much lower intrinsic carrier concentration [32]. The contact resistances can be obtained in the linear region by parallel-mode capacitance-voltage method [38], but the drain contact resistance in the saturation region is expected to be much larger than the source contact resistance due to strong depletion. In Figure 4, when Lch = 360 nm, the contact resistance is larger than the channel resistance, indicating a strong short-channel effect.…”

Section: Resultsmentioning

confidence: 99%

Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Wang

Yang

Wang

et al. 2018

IEEE Trans. Electron Devices

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Amorphous indium-gallium-zinc oxide (a-InGaZnO or a-IGZO) has already started replacing amorphous silicon in backplane driver transistors for large-area displays. However, hardly any progress has been made to commercialize a-IGZO for electronic circuit applications mainly because a-IGZO transistors are not yet capable of operating at GHz frequencies. Here, nanoscale a-IGZO thin-film transistors (TFTs) are fabricated on a high-resistivity silicon substrate with a Ta2O5 gate dielectric. Carrier mobilities up to 18.2 cm 2 V-1 s-1 have been achieved. By optimization of the TFT channel length and contact overlap, we are able to demonstrate current-gain and power-gain cutoff frequencies at 1.24 and 1.14 GHz, respectively, both beyond the 1 GHz benchmark. Such a performance may have implications in developing at least medium-performance, a-IGZO-TFTs-based circuits for low-cost or flexible electronics.

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Section: Resultsmentioning

confidence: 99%

Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Wang

Yang

Wang

et al. 2018

IEEE Trans. Electron Devices

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“…Indeed, there is not a value of channel length to determine if short channel effects will be exhibited on the electrical characteristics of the TFT. Reported TFTs exhibited short channel effects at channel lengths L lower than 20 μm, meanwhile other TFTs (some with high contact resistance) did not exhibited short channel effects at L of 10 μm [1,[3][4][5][6][7][8][9][10]. Moreover, a TFT may exhibit high contact resistance effects at considered long channel values.…”

Section: Introductionmentioning

confidence: 99%

Metal-Semiconductor Interfaces in Thin-Film Transistors

Dominguez¹,

Rosales²,

Torres³

et al. 2017

Different Types of Field-Effect Transistors - Theory and Applications

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The metal-semiconductor interface in thin-film transistors (TFTs) is one of the bottlenecks on the development of these devices. Although this interface does not play an active role in the transistor operation, a low-quality interface can be responsible for a low performance operation. In a-Si TFTs, a doped film can be used to improve this interface, however, in other TFT technologies, there is no doped film to be used. In this chapter, some alternatives to improve this interface are analysed. Also, the influence of this interface on the electrical stability of these devices is presented.

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