Characterization of interface states at Ni/nCdF2 Schottky barrier type diodes and the effect of CdF2 surface preparation

Singh, Arjun

doi:10.1016/0038-1101(85)90002-4

Cited by 202 publications

(50 citation statements)

References 35 publications

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“…On the other hand, Aydın et al [40] found that density distribution profile of N ss has U shape behavior. Similar results have been also reported in literature [45,46]. Such behavior of N ss can be attributed to interface state continuum and not with single level states or bands of interfacial states as suggested by Kar and Dahlke [14].…”

Section: à3supporting

confidence: 91%

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

Demirezen

Altındal

Özçelik

et al. 2011

Microelectronics Reliability

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a b s t r a c tIn order to explain the experimental effect of interface states (N ss ) and series resistance (R s ) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/x-V) characteristics of (Ni/Au)/Al 0.22 Ga 0.78 N/AlN/GaN heterostructures were investigated at room temperature. Admittance measurements (C-V and G/x-V) were carried out in frequency and bias voltage ranges of 2 kHz-2 MHz and (À5 V)-(+5 V), respectively. The voltage dependent R s profile was determined from the I-V data. The increasing capacitance behavior with the decreasing frequency at low frequencies is a proof of the presence of interface states at metal/semiconductor (M/S) interface. At various bias voltages, the ac electrical conductivity (r ac ) is independent from frequencies up to 100 kHz, and above this frequency value it increases with the increasing frequency for each bias voltage. In addition, the high-frequency capacitance (C m ) and conductance (G m /x) values measured under forward and reverse bias were corrected to minimize the effects of series resistance. The results indicate that the interfacial polarization can more easily occur at low frequencies. The distribution of N ss and R s is confirmed to have significant effect on non-ideal I-V, C-V and G/x-V characteristics of (Ni/Au)/Al 0.22 Ga 0.78 N/AlN/GaN heterostructures.

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Section: à3supporting

confidence: 91%

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

Demirezen

Altındal

Özçelik

et al. 2011

Microelectronics Reliability

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“…This is why at the higher values of the frequencies the diode capacitance is low as compare to the lower values of the frequency [40]. The obtained results are closed to those obtained for metal-semiconductor contacts [34][35][36][37][38][39][40][41][42].…”

Section: Frequency Dependent Impedance Analysismentioning

confidence: 46%

Analysis of junction properties of gold–zinc oxide nanorods-based Schottky diode by means of frequency dependent electrical characterization on textile

et al. 2014

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Moreover, current density-voltage (J-V) was measured to know the performance of present Schottky diode. The effect of native defects at the interface was also studied by using cathodoluminescence spectroscopy by varying different accelerating voltage. The textile substrate was used for the growth of ZnO nanorods by using the aqueous chemical growth (ACG) method and Schottky diode fabrication. Diode fabrication on textile fabric is a step forward towards the fabrication of electronic devices on non-conventional, economical, soft, light weight, flexible, wearable, washable, recyclable, reproducible and nontoxic substrate.

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“…Such behavior of C may be attributed to the shrinking of the depletion region width (W D ) and restructure and reordering of interface states under illumination effect. The relationship of theoretical carrier doping concentration N D = 6.16 × 10 16 cm −3 and the experimental carrier doping concentration N D is given by [33][34][35] …”

Section: Illumination Intensity Dependence Of the C-v And G/ω-v Charamentioning

confidence: 99%

The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes

Uslu

Altındal

Aydemir

et al. 2010

Journal of Alloys and Compounds

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Characterization of interface states at Ni/nCdF2 Schottky barrier type diodes and the effect of CdF2 surface preparation

Cited by 202 publications

References 35 publications

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current–voltage (I–V) and admittance spectroscopy methods

Analysis of junction properties of gold–zinc oxide nanorods-based Schottky diode by means of frequency dependent electrical characterization on textile

The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes

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