Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

Akkal, B.; Benamara, Z.; Gruzza, B.; Bideux, L.

doi:10.1016/s0042-207x(00)00131-7

Cited by 127 publications

(40 citation statements)

References 12 publications

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“…It has been seen that the interface state density has an exponential rise with bias from the midgap towards the top of the valence band. The relaxation time shows a slow exponential rise with bias from the top of the valence band towards the midgap, as reported by some authors for metal/Schottky diodes (17)(18)(19). Thus, it can be said the relaxation time to be bias-dependent.…”

Section: The Conductance-and Capacitance-frequency Characteristicssupporting

confidence: 61%

The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

Çakar

Türüt

Onganer

2002

Journal of Solid State Chemistry

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Section: The Conductance-and Capacitance-frequency Characteristicssupporting

confidence: 61%

The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

Çakar

Türüt

Onganer

2002

Journal of Solid State Chemistry

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“…Here N C is the effective density of states in conduction band for GaAs 1-x -N x at room temperature given by [31]:…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…The density of interface states (Nss) as a function of frequency was extracted from C-V-f and G/ω-V-f characteristics. From Hill and Coleman method [13,26,[27][28][29][30][31][32], the density of interface states (N ss ) is given by:…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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(2016) Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16 (8). pp. 850-858. ISSN 1878850-858. ISSN -1675 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/39520/1/1-s2.0-S156717391630116X-main.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the Creative Commons Attribution Non-commercial No Derivatives licence and may be reused according to the conditions of the licence. For more details see: http://creativecommons.org/licenses/by-nc-nd/2.5/ A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Effect aek1976@outlook.com Abstract:Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltagefrequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60 Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs 1-x N x Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

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“…With increasing applied frequency, both capacitance ( ) and conductance ( / ) values decrease, and the peak value of the / also decreases under the effect of series resistance of the diode [7]. However, frequency affects these measured values strongly at low frequencies and this can be attributed to the presence of interfacial oxide layer and the particular distribution of interface states [8][9][10]. Assuming the total diode capacitance as a sum of junction and interface state capacitance, exchanges of the carriers can contribute to the total diode capacitance by the fact that at relatively low frequencies the interface states can follow the applied ac signal [11,12].…”

Section: Results and Discussion (Sonuçlar Vementioning

confidence: 99%

Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode

Güllü¹,

Yıldız²

2018

Journal of Polytechnic

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The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz -1 MHz at room temperature. The experimental values of dielectric constant and dielectric loss are found in decreasing behavior with increase in frequency due to the characteristics of the interface capacitance in the diode and so that the similar behavior was observed in loss tangent. With the contribution of the series resistance, the results of the electrical conductivity analysis indicated direct proportionality to the frequency change. Additionally, electric modulus was discussed to represent the dielectric relaxation process in the diode structure.

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Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

Cited by 127 publications

References 12 publications

The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode

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