Characterization of interdiffusion around miscibility gap of lattice matched InGaAs∕InP quantum wells by high resolution x-ray diffraction

Abstract

A methodology to characterize of thermally interdiffused heterostructures by high resolution x-ray diffraction is presented. The technique provides detailed information on the strains and compositions generated throughout the interdiffusion process in a 10 nm lattice matched InGaAs/ InP sample annealed at 800°C. It shows that the diffusion process is complex and subject to the influence of the miscibility gap in the quaternary InGaAsP system. The technique also appears to provide a route to mapping the binodal isotherms of the InGaAsP miscibility gap.