Photoluminescence and high-resolution x-ray diffraction ͑HRXRD͒ studies of the diffusion in lattice matched InGaAs/InP quantum wells show that at high temperatures intermixing can be modeled by Fick's law with an identical diffusion rate for both the group III and group V sublattices. This results in materials that remain lattice matched for all compositions created by the diffusion. At lower temperatures, the photoluminescence shows that the diffusion process changes and HRXRD shows that strained layers are produced within the structure. This may be due to the presence of the miscibility gap within the InGaAsP phase diagram.
Photoluminescence and high resolution x-ray diffraction ͑HRXRD͒ were used to follow the diffusion of a lattice matched InGaAs/InP heterostructure at various annealing temperatures. At 900°C no strain was observed by HRXRD and this indicated that the two sublattices in the sample diffused at an equal rate and only compositions on the tie line between the two initial compositions were formed. At lower annealing temperatures strain was observed in the wells and barriers, the signs of which changed during the annealing process. This is indicative of the diffusion rates of the two sublattices changing during the annealing process. It is suggested that these effects may be due to the presence of the miscibility gap in the InGaAsP system.
A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs/ GaAs quantum well structure repeatedly diffused under thermally accurate and timed annealing conditions demonstrates that the Fickian model with a constant coefficient of diffusion is inadequate and that the distribution of compositions of the diffused well cannot be fitted with error functions. A simple model, with the well retaining its square shape and homogeneity while dissolving the barriers when annealed, is successful in modelling both the HRXRD and photoluminescence data.
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