Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

Ketterson, A.; Masselink, W. T.; Gedymin, J.S.; Klem, John F.; Peng, C. K.; Kopp, W.; Morkoç̌, H.; Gleason, K.R.

doi:10.1109/t-ed.1986.22533

Cited by 131 publications

(21 citation statements)

References 14 publications

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“…6. Also shown is the bulk 2DEG mobility, ~2, which follows the classical 2DEG temperature dependence, and in fact agrees very well with Hall-effect data (8), considering that the latter are uncorrected for parallel conduction. The fact that t~2 < ~2 is not surprising, since significant diffusion of the contacting materials is expected (10).…”

Section: Fig 5 Resistance Vs Contact Spacing For Modfet Materials Asupporting

confidence: 83%

“…Note that the one-layer MTLM gives mobilities which are too low, due to its neglect of parallel conduction. Also, the two-layer model shows that nsl and n~2 are almost independent of temperature, which, incidently, is a significant advantage of the A10.15Ga0.8~&s/In0.15Gao.8~As system over the more common A10.3Ga0.TAs/GaAs system (8). The reason is that the DX-center concentration is much lower for the former material so that low-temperature freeze-out is not as severe a problem.…”

Section: Fig 5 Resistance Vs Contact Spacing For Modfet Materials Amentioning

confidence: 95%

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Contact Resistance Measurements in GaAs MESFET's and MODFET's by the Magneto‐TLM Technique

Look

1988

J. Electrochem. Soc.

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The standard transmission-line model (TLM) for specific contact resistivity measurements of planar contacts is improved in two ways: (i) the addition of a magnetic field, which gives the mobility and carrier concentration of the bulk material, and the mobility of the material under the contact; and (ii) an extension to two layers, which makes the model applicable to MODFET structures. The results are applied to GaAs MESFET material, and A1GaAs/InGaAs MODFET material. One conclusion concerning the latter material is that the InGaAs electrons directly beneath the annealed Au/Ge/Ni contacts have lower mobility than those in the bulk, but still maintain 2DEG character.

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Section: Fig 5 Resistance Vs Contact Spacing For Modfet Materials Asupporting

confidence: 83%

Section: Fig 5 Resistance Vs Contact Spacing For Modfet Materials Amentioning

confidence: 95%

Contact Resistance Measurements in GaAs MESFET's and MODFET's by the Magneto‐TLM Technique

Look

1988

J. Electrochem. Soc.

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“…Detail description of fabrication and device structure of the pseudomorphic (+) -1nGaAs MODFET #2324 was given in [3]. That for the conventional MODFET (#677) was given in [4].…”

Section: Description Of Test Modfets and Experimentsmentioning

confidence: 99%

A comparison of low- and high-frequency noise spectra of 0.1 micron gate-length conventional, pseudomorphic, and planar-doped MODFET structures

Liu

Fu²,

Das³

et al. 1987

1987 International Electron Devices Meeting

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In Modulation-doped FETs and MESFETs, as the gatelength is reduced, the generation-recombination (g-r) noise and l / f noise spectral intensities usually increase, whereas the thermal noise at high frequencies tends t o decrease. Thus the lower corner frequency (fc), where the LF noise intercepts with the extrapolated HF noise. moves steadily into higher frequencies. This report sh6ws that. through better device structure design, the impact of LF noise on the microwave and millimeter-wave performance can be minimized. It is also shown that inherently low thermal noise is attainable in MODFETs. INTRODUCTIONWe investigated the noise performance of various device designs in order t o correlate the LF noise and millimeter-wave noise performance to the circuit parameters of the device. Through this, we find that the g-r noise usually responsible for the higher f c observed in most MODFETs is reduced in one case of the planar-doped MODFET structure.The reduced g-r noise allows the identification of the l / f noise component in the LF noise spectrum. The l / f noise has been suggested t o be due to the quantization of energy loss by Umklapp scat-

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“…Current heterojunction FET designs are based either on the modulation-doped high electron mobility transistor (HEMT) approach, which has high mobility, but is limited in sheet carrier density [1], or the doped channel heterojunction field effect transistor (HFET) structure, which gives increased carrier density at the expense of degraded mobility [2]. We have recently reported [3] on a layer structure which combines the desirable features of these two approaches, and have demonstrated the possibility of obtaining high channel density structures (∼5 × 10 12 carriers cm −2 ) with mobility and saturation drift velocity values comparable with existing devices.…”

Section: Introductionmentioning

confidence: 99%

Investigation of delta-doped quantum wells for power FET applications

Roberts

Harris

Woods

et al. 1998

Superlattices and Microstructures

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Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

Cited by 131 publications

References 14 publications

Contact Resistance Measurements in GaAs MESFET's and MODFET's by the Magneto‐TLM Technique

Contact Resistance Measurements in GaAs MESFET's and MODFET's by the Magneto‐TLM Technique

A comparison of low- and high-frequency noise spectra of 0.1 micron gate-length conventional, pseudomorphic, and planar-doped MODFET structures

Investigation of delta-doped quantum wells for power FET applications

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