Contact Resistance Measurements in GaAs MESFET's and MODFET's by the Magneto‐TLM Technique

Look, D. C.

doi:10.1149/1.2096208

J. Electrochem. Soc.

1988

DOI: 10.1149/1.2096208

|View full text |Cite

Contact Resistance Measurements in GaAs MESFET's and MODFET's by the Magneto‐TLM Technique

D. C. Look

Abstract: The standard transmission-line model (TLM) for specific contact resistivity measurements of planar contacts is improved in two ways: (i) the addition of a magnetic field, which gives the mobility and carrier concentration of the bulk material, and the mobility of the material under the contact; and (ii) an extension to two layers, which makes the model applicable to MODFET structures. The results are applied to GaAs MESFET material, and A1GaAs/InGaAs MODFET material. One conclusion concerning the latter materi… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1992

1996

Publication Types

Select...

Article4

Relationship

Self Cite0

Independent4

Authors

Journals

Cited by 4 publications

(1 citation statement)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We briefly mention that our other measurements in the contacts by shining light or by varying B up to the quantum Hall regime also confirm this conclusion. Analysing magnetoresistance data in the low-field regime using a model described in [10], we obtained a reduced mobility of ∼ 1 × 10 5 cm 2 V −1 s −1 under contacts. Also, the presence of disorder is manifested by the reduced focusing peak height and is found in quantum interference measurements made at much lower temperatures.…”

mentioning

confidence: 99%

Untitled

Gao¹,

Kerkhof²,

Verwerft³

et al. 1996

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Tin-based superconducting contacts have been successfully made to GaAs/AlGaAs heterostructures in several groups. To identify whether the superconductor contacts directly with the two-dimensional electron gas (2DEG), we study the electronic properties underneath the contact locally by means of an electron focusing technique in a GaAs/AlGaAs device which consists of a Sn/Ti contact and two quantum point contacts. The observation of classical focusing peaks shows the presence of a 2DEG under the contact. Together with inspection by cross-sectional electron microscopy, we conclude that the superconducting contacts are formed not in the 2DEG but somewhere above the 2DEG.

show abstract

mentioning

confidence: 99%

Untitled

Gao¹,

Kerkhof²,

Verwerft³

et al. 1996

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

Influence of metal/n-InAs/interlayer/n-GaAs structure on nonalloyed ohmic contact resistance

Shiraishi

Furuhata

Okamoto

1994

Journal of Applied Physics

View full text Add to dashboard Cite

We have investigated in detail the influence of interlayer structures on nonalloyed ohmic contact resistance (ρc), in terms of the crystalline defects and the potential barrier at the interlayer/GaAs interface. The interlayer structures are a graded-band-gap InAs/GaAs strained-layer superlattice (graded SLS), a graded-band-gap InGaAs, and conventional SLSs without graded band gaps. A two-layer transmission line model indicates that the barrier resistance in the interlayer highly depends on the interlayer structure: ≤5×10−8 Ω cm2 for the graded SLS and graded InGaAs interlayers and 10−5–10−6 Ω cm2 for the conventional SLS interlayers. To explain the large dependence of the interlayer structure, first, the density and distribution of the misfit dislocations and stacking faults caused by the large lattice mismatch between InAs and GaAs have been investigated in detail by high-resolution transmission electron microscopy. In the graded SLS and conventional SLS interlayers, the influence of the high-density depletion regions spread near the crystalline defects is found to be negligible because of the high doping concentrations (∼1019 cm−3) in the interlayers. Second, the potential barrier at the interlayer/GaAs interface has been investigated by simulating the barrier resistance. The potential barrier profile is calculated self-consistently with Poisson’s equation and the Schrödinger equation. Tunneling current through the barrier is analyzed using the Wentzel–Kramers–Brillouin approximation or the numerical wave solution to the Schrödinger equation. The graded SLS interlayer has the effectively smooth conduction band profile without the barriers, which is similar to that of the graded InGaAs interlayer, because of its short period SLS. In the conventional SLS interlayers, the reasonable barrier heights of 0.14–0.26 eV obtained by this simulation indicates that these barriers are the dominant factor which increases the contact resistances. For the low-resistance nonalloyed ohmic contact, therefore, a smooth conduction band profile without band discontinuity is more predominant than the reduction in the crystalline defect density.

show abstract

Direct current and microwave characterization of integrated resonant tunneling diodes

Janes

Webb

Carroll

et al. 1995

Journal of Applied Physics

View full text Add to dashboard Cite

We present an integrated device fabrication sequence for GaAs/AlGaAs resonant tunneling diodes and the results of dc and microwave characterization of the integrated devices. The development of an integrated structure represents a first step toward monolithic or hybrid integration for applications such as oscillators in the 100 GHz–1 THz range. The use of a proton implant in addition to a mesa etch for device isolation allows low parasitic capacitance connections to bond pads, interconnects, or radiating elements. The dc and microwave measurement procedures and an equivalent circuit topology for the integrated device are described. Several features associated with the integrated geometry, including a decrease in peak current density with increasing device diameter, are observed in a study of the current-voltage characteristics of devices with various diameters. Contact resistances are determined from a physically based model and compared with experimental results. Microwave characterization techniques are used to obtain microwave equivalent circuit parameters for the integrated diodes. Device capacitance and conductance are presented as functions of device dimension and bias voltage. Parasitic circuit elements, including series resistance and a capacitance and resistance associated with the proton bombardment used to define the mesa, are also determined from the microwave analysis. The results obtained from microwave impedance measurements are compared with parameters obtained from dc characterization and numerical simulations of comparable device structures.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Contact Resistance Measurements in GaAs MESFET's and MODFET's by the Magneto‐TLM Technique

Cited by 4 publications

References 3 publications

Untitled

Untitled

Influence of metal/n-InAs/interlayer/n-GaAs structure on nonalloyed ohmic contact resistance

Direct current and microwave characterization of integrated resonant tunneling diodes

Contact Info

Product

Resources

About