Characterization of hydrogenated amorphous silicon thin films prepared by magnetron sputtering

Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics

“…Hydrogen contained in the forming gas can be incorporated into the a-Si film with the assist of plasma during the sputtering process. 19 Fig. 3(a) shows the I-V charactersitics of the hydrogen doped Ag/a-Si (Ag/a-Si:H) system of the device.…”

“…This result indicates that the hydrogen-doped device has Si film passivated by hydrogen because a peak at 2080 cm −1 denotes the presence of hydrogen-Si bondings in the film. 19 The observed changes in the characteristics of the Ag/a-Si:H system of device can be explained as follows. Intrinsic dangling defects existing in the amorphous Si film of the device worked as traps in terms of atomic diffusion and thus impeded their diffusion, which is schematically demonstrated in Fig.…”

Effects of hydrogen pressure on hydrogenated amorphous silicon thin films prepared by low‐temperature reactive pulsed laser deposition

“…4). hydrogen is incorporated in the amorphous matrix [8,28]. Additional reasons for bandgap widening in a-Si:H films include the formation of microvoids [4] and oxygen incorporation [13].…”

Modification of structure and optical band-gap of nc-Si:H films with ion irradiation

“…The absorption coefficient increases significantly with increasing the fluence at a wavelength range of 400-700 nm while there is only a slight change beyond the wavelength of 700 nm. It is well known that the optical band-gap (E g ) of nc-Si:H film has a close relation with the crystallite size/crystalline fraction [15], defect [16] and hydrogen content [17]. Based on the relationship of a / (hmÀE g ) 2 /hm [18], the optical band-gap E g of the samples can be deduced by fitting the experimental data where a is the absorption coefficient, hm is the photon energy.…”