Characterization of Glass Insulating Thick Films with Ag Conductors for Multilayer Packages

Abstract

In this paper, an insulating film was successfully prepared by sintering 35 wt % CaO-15 wt % Al2O3-10 wt % B2O3-40 wt % SiO2 glass at 875 °C. After sintering, the main component of the insulating film was glass-ceramics. The main crystal phase was CaAl2Si2O8, and the crystallization activation energy was 189.76 kJ/mol. After preparing the insulating film, its color turned yellow, and the diffusion of Ag was found by XPS and XRD data. When the temperature increased to 875 °C, the color of the insulating film became lighter, and the silver content decreased. The adhesion of the multilayer structure could reach 875 N. The dielectric constant of the insulating film in the multilayer structure was approximately 5, and the dielectric loss was 0.0011. After sintering, the dielectric strength of the insulating film could reach 13.11 kV/mm, which fully meets the requirements of a complex packaging structure.

In Vivo Penetrating Microelectrodes for Brain Electrophysiology

“…Since silicon is a semiconductor material, it is covered with various insulating materials [ 101 ]. Some insulating materials include: varnish [ 102 ], glass [ 49 , 103 ], Teflon [ 104 ], silicon dioxide (SiO 2 ) [ 105 , 106 ], silicon nitride (SiN) [ 105 , 107 ], silicon carbide [ 108 , 109 ], silicon dioxide with hafnium dioxide (HfO 2 /SiO 2 ) bilayers [ 110 ], aluminum oxide (Al 2 O 3 ) [ 111 ] and diamond-based coatings [ 101 , 112 ]. However, microelectrodes fabricated on a rigid substrate, such as silicon, cause inflammatory reactions, which further leads to microelectrode failure [ 31 , 75 , 113 ].…”