Characterization of gallium nitride microsystems within radiation and high-temperature environments

Chiamori, Heather C.; Hou, Minmin; Chapin, Caitlin A.; Shankar, Ashwin; Senesky, Debbie G.

doi:10.1117/12.2046690

Cited by 4 publications

(3 citation statements)

References 14 publications

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“…They are favorable for light emitting devices (LEDs, LDs) , due to their direct band gap properties, and their emissions span a wide range from the UV to the visible and a wide transparency range from the UV to mid-IR . GaN exhibits high breakdown voltage (>3 MV/cm) and moderate thermo-optic coefficient (∼5 × 10 –5 ) , and is robust to environmental changes such as the elevated temperature, corrosive environment, and ionizing radiation . Due to its wurtzite noncentrosymmetric structure, GaN also possesses second-order nonlinearity χ (2) (∼10 pm/V , ).…”

Section: Bottlenecks To Overcome and Approaches To Scale The Performa...mentioning

confidence: 99%

“…58 GaN exhibits high breakdown voltage (>3 MV/cm) 59 and moderate thermo-optic coefficient (∼5 × 10 −5 ) 60,61 and is robust to environmental changes such as the elevated temperature, corrosive environment, and ionizing radiation. 62 Due to its wurtzite noncentrosymmetric structure, GaN also possesses second-order nonlinearity χ (2) (∼10 pm/V 63,64 ). Its third nonlinear coefficient is about an order of magnitude higher than those of Si 3 N 4 , LN, and AlN (n 2 = 3.4 × 10 −18 m 2 / W 65,66 ), leading to exciting opportunities in nonlinear photonics applications.…”

Section: Bottlenecks To Overcome and Approachesmentioning

confidence: 99%

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Scalability of Large-Scale Photonic Integrated Circuits

Guo

et al. 2023

ACS Photonics

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To keep up with the growing bandwidth demands, photonic integrated circuits (PICs) have been widely employed in various application scenarios where high capacity and high-bandwidthdensity interconnects are required. However, it is challenging to scale the PICs toward future petabit per second capacity requirements. We study the scalability bottlenecks of PICs in terms of guiding materials, dense integration approaches, wide-band optical sources, and highefficiency tunable and modulation devices. We also look for possible solutions to address these challenges. In the end, we provide a perspective on future PIC development. Moore's law for integrated photonics may last for a much shorter time than that in the microelectronics industry, requiring significant innovations and technological breakthroughs in PIC research.

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Section: Bottlenecks To Overcome and Approaches To Scale The Performa...mentioning

confidence: 99%

Section: Bottlenecks To Overcome and Approachesmentioning

confidence: 99%

Scalability of Large-Scale Photonic Integrated Circuits

Guo

et al. 2023

ACS Photonics

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“…In addition, AlGaN/GaN piezoresistors suffer from temperature cross-sensitivity which is significant at high-temperatures and interferes with the strain measurement. However, there are no experimental reports of the strain response of AlGaN/GaN HEMT devices at temperatures above 100 °C [14] and few reports of simulation models which capture this operating condition [15]. Recent experimental results have demonstrated a large increase in the strain sensitivity AlGaN/GaN HEMTs (transistor based) [4,16,17].…”

Section: Introductionmentioning

confidence: 99%

Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors

Yalamarthy

Senesky

2016

Semicond. Sci. Technol.

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This paper presents a physics-based model for computing the combined effect of applied strain and temperature on the device characteristics of aluminium gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). More specifically, the electrical response of the HEMT is predicted under applied biaxial strain from ±1% over a wide range of temperatures (300-500 K). In addition, the interface state densities at the Schottky-AlGaN interface are introduced in the model. This physics-based model calculates the charge due to applied, thermal and lattice mismatch strain and temperature effects at the two-dimensional electron gas (2DEG) interface of the HEMT. Coupled with a model for the 2DEG mobility that includes strain and temperature effects, current-voltage characteristics for the HEMT are derived above the threshold voltage. Regimes with large strain sensitivity and temperature compensation are identified and vice-versa. The analysis from the model clarifies the large range of strain response variations observed in the experimentally measured characteristics of HEMTs in literature. Furthermore, the developed model is a useful tool for predicting the response of HEMTs used in sensing and under the influence of packaging in extreme environments, especially when temperature fluctuation and strain coupling is of concern.

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Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR

Guo

Yao

et al. 2023

Nanophotonics

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Silicon photonics has gained great success mainly due to the promise of realizing compact devices in high volume through the low-cost foundry model. It is burgeoning from laboratory research into commercial production endeavors such as datacom and telecom. However, it is unsuitable for some emerging applications which require coverage across the visible or mid infrared (mid-IR) wavelength bands. It is desirable to introduce other wideband materials through heterogeneous integration, while keeping the integration compatible with wafer-scale fabrication processes on silicon substrates. We discuss the properties of silicon-family materials including silicon, silicon nitride, and silica, and other non-group IV materials such as metal oxide, tantalum pentoxide, lithium niobate, aluminum nitride, gallium nitride, barium titanate, piezoelectric lead zirconate titanate, and 2D materials. Typical examples of devices using these materials on silicon platform are provided. We then introduce a general fabrication method and low-loss process treatment for photonic devices on the silicon platform. From an applications viewpoint, we focus on three new areas requiring integration: sensing, optical comb generation, and quantum information processing. Finally, we conclude with perspectives on how new materials and integration methods can address previously unattainable wavelength bands while maintaining the advantages of silicon, thus showing great potential for future widespread applications.

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Characterization of gallium nitride microsystems within radiation and high-temperature environments

Cited by 4 publications

References 14 publications

Scalability of Large-Scale Photonic Integrated Circuits

Scalability of Large-Scale Photonic Integrated Circuits

Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors

Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR

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