Characterization of external resistance effect and performance optimization in unipolar-type SiOx-based resistive switching memory

Abstract

SiOx-based resistive random access memory devices with metal-insulator-metal structure are compared to metal-insulator-semiconductor structures, and the effects of external resistance on device performance are characterized. The different reset behaviors are explained as a positive feedback mechanism involving a sudden voltage decrease across the external series resistance when the reset process commences. By varying external resistance, we observe a constant threshold voltage (2.46 V) for the reset process that is possibly due to a voltage-triggered switching mechanism. Our experimental results not only clarify the reset mechanism but also provide insights on optimization of external resistance for programing reliability and operating speed.

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

“…As a result, there is a larger voltage drop across the series resistance in the MIS devices, and therefore MIS devices require higher applied voltage to initiate the reset process. The reset process takes place when the voltage reaches a threshold level (i.e., reset voltage of 5.1 V in this example), 17 and the resistance begins to increase while the conduction current decreases. After the set process, the device stays in the LRS.…”

“…11 Much work has been done to optimize the structure, fabrication procedure, dielectric material, and to understand the operating mechanisms of SiO x -based RRAM. [12][13][14][15][16][17][18][19][20][21] In these studies, voltage sweep measurements were the fundamental characterization method to obtain switching parameters, such as set voltage, reset voltage, and high-resistance state (HRS) to low-resistance state (LRS) resistance ratio.…”

Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air

“…The differences in switching characteristics and charge transport suggest that the fundamental operating mechanisms may be different in Si-rich silica as compared with SiO x materials that exhibit unipolar properties in vacuum ambient. 3 More studies on the operation of SiO x -based RRAM devices in air are needed, particularly their electroforming process, reversible switching characteristics, and switching mechanisms. In this paper, we fabricated devices with two different structures, namely, those with a continuous SiO x layer and previously reported structures with an etched SiO x layer and an exposed edge.…”

“…[3][4][5] The Si/SiO 2 system has been utilized extensively in the semiconductor industry for over half a century. All advanced fabrication technologies evolved around this materials system, which gives it unparalleled advantages in terms of device miniaturization and scaling efficiency.…”

Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory

“…Proton-induced resistive switching behaviors in the SiO x memory element were discussed, where the SET threshold is modeled as proton desorption from the (SiH) 2 defect to generate the conductive hydrogen bridge, Si-H-Si, and the RESET transition is modeled as proton release and capture to reform nonconductive (SiH) 2 [82][83][84][85][86][87][88][89]. The electrical results demonstrate that the technology has good potential for providing a simple and robust approach for large-scale integration of programmable neuromorphic chips using CMOS technology, and represent a critical milestone regarding the potential use of SiO 2 -based resistive memory as a synaptic device in future synthetic biological computing applications.…”