Characterization of epitaxially grown indium islands on Si(111)

Abstract

Indium deposition onto on-axis Si(111) substrates and those miscut by 2.5° toward [112¯] was investigated. The Si substrates were held at temperatures ranging from room temperature up to 475 °C and the In deposition rate was varied by a factor of ∼20. All depositions were performed under ultrahigh vacuum conditions onto surfaces that were cleaned in situ. For growth at 100 °C and room temperature, the In films organize into three-dimensional islands. This result suggests that In deposition onto on-axis or miscut Si(111) substrates at temperatures lower than the In melting point of 157 °C is a viable route to form In seeds for epitaxial Si or Ge nanowire growth using the vapor–liquid–solid method. The morphology of the resultant island ensembles and their formation mechanisms are discussed.

Optimization of In2Se3/Si(111) Heteroepitaxy To Enable Bi2Se3/In2Se3 Bilayer Growth

“…Previous results published by our group and others have shown that In growth on Si(111) at temperatures lower than the In melting point (156 °C) follows the Stranski− Krastanov (SK) mode for which 3D islands grow atop a thin planar layer. 43,44 Therefore, it is likely that the 3D islands observed in Figure 2a are the outcome of this growth mode. That is, the 3D islands form during room temperature In deposition and persist after selenization.…”

On the performance characterization of silicon MOSFETs on 4° off-axis substrate

“…The major reason is that high quality III-V semiconductor materials can be directly grown on it [1,2,3]. This enables great possibilities of monolithic integration of the III-V devices (as well as optoelectronic and microelectronic devices) with silicon devices [4,5,6,7].…”