Characterization of Epitaxial β-(Al,Ga,In)2O3-Based Films and Applications as UV Photodetectors

Lyle, Luke A. M.; Okur, Serdal; Chava, Venkata S. N.; Kelley, Mathew L.; Davis, R. F.; Tompa, Gary S.; Chandrashekhar, M. V. S.; Greytak, Andrew B.; Porter, Lisa M.

doi:10.1007/s11664-020-07985-3

Cited by 15 publications

(10 citation statements)

References 15 publications

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“…The inset of Fig. 2(c) displays the relationship between (αhν) and E g , which is calculated according to the Tauc formula combined bandgap of the film [32] hν…”

Section: Resultsmentioning

confidence: 99%

“…Under an external bias voltage of 50 V, the calculation shows that, EQE = 2 × 10 5 %, which proves that the device has great muscle augmentation. The noise equivalent power (NEP) represents the minimum incident optical power required for the signal-to-noise ratio (SNR) to reach 1, and is calculated using the following equation: [32] NEP =…”

Section: Resultsmentioning

confidence: 99%

“…[7] The ultra-wide bandgap semiconductors have large bandgaps and high Baliga figures of merit (BFOMs), providing incomparable advantages in terms of breakdown resistance, low leakage, and low loss. [8][9][10] In recent years, ultra-wide bandgap semiconductor materials, including aluminum nitride (AlN), [11][12][13] diamond, [5,14,15] β -phase gallium oxide (β -Ga 2 O 3 ), [2,[16][17][18][19][20][21][22][23][24] aluminum gallium nitride (AlGaN), [25,26] aluminum gallium oxide (AlGaO), [27] magnesium zinc oxide (MaZnO) [28] and InGaO [29][30][31][32] have been used to fabricate solar-blind photodetectors. As an important member of ultrawide bandgap semiconductors, the bandgap (BFOM) of β -Ga 2 O 3 is 4.9 eV (3000).…”

Section: Introductionmentioning

confidence: 99%

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High performance solar-blind deep ultraviolet photodetectors via β-phase (In_0.09Ga_0.91)₂O₃ single crystalline film

Wang 王,

Tang 汤,

Zheng 郑

et al. 2023

Chinese Phys. B

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In this paper, we successfully fabricate a high performance β-phase (In0.09Ga0.91)2O3 single-crystalline film deep ultraviolet (DUV) solar-blind photodetector. The 2-inches high crystalline quality film is hetero-grown on sapphire substrates using plasma-assisted molecular beam epitaxy (PA-MBE). The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector, which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure. The device exhibited a low dark current of 40 pA (0 V), while its UV photon responsivity exceeded 450 A/W (50 V) at the peak wavelength of 232 nm with illumination intensity of 0.21 mW/cm2 and the UV/VIS rejection ratio (R232nm/R380nm) exceeds 4×104. Furthermore, the devices demonstrated ultrafast transient characteristics for DUV signals, with fast-rising and fast-falling times of 80 ns and 420 ns, respectively. This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga2O3 alloys to enhance the performance of InGaO solar-blind detectors. Additionally, a two-dimension DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system. Our results pave the way for future applications of two-dimensional array DUV photodetectors based on large-scale InGaO hetero-epitaxially grown alloy wide bandgap semiconductor films.

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“…The inset of Fig. 2(c) displays the relationship between (αhν) and E g , which is calculated according to the Tauc formula combined bandgap of the film [32] hν…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High performance solar-blind deep ultraviolet photodetectors via β-phase (In_0.09Ga_0.91)₂O₃ single crystalline film

Wang 王,

Tang 汤,

Zheng 郑

et al. 2023

Chinese Phys. B

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“…The bandgap of β-(Al x Ga 1– x ) 2 O 3 has been recently studied over the whole range of the alloy composition using various techniques. − …”

Section: Introductionmentioning

confidence: 99%

Spatially Resolved Investigation of the Bandgap Variation across a β-(Al_xGa_1–x)₂O₃/β-Ga₂O₃ Interface by STEM–VEELS

Chmielewski

Deng

Moradifar

et al. 2022

ACS Appl. Electron. Mater.

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Alloying β-(Al x Ga1–x )2O3 on a β-Ga2O3 substrate results in a heterojunction with a tunable bandgap, but is often plagued by defects in the interface region. In this work, using valence electron energy loss spectroscopy combined with density functional theory calculations, we identify a high concentration of cation interstitials at a β-(Al0.2Ga0.8)2O3/β-Ga2O3 interface and measure the optical absorption edge. We find a dip in the band edge of 0.1 eV depth and a width of around 15 nm on the β-Ga2O3 side of the interface with signs of noticeable electron probe delocalization broadening and discuss defect states versus excitons as its possible origins.

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“…Over the last decade, the semiconductor β-Ga 2 O 3 has generated significant interest in the international community due to its ultrawide band gap (4.7–4.9 eV), range of shallow n-type dopants (Si, Sn, Ge), − and its ability to be grown from the melt, allowing the production of large-area, cost-effective substrates. , Due to these considerations, β-Ga 2 O 3 is pursued for applications in the power electronics − and UV photodetector − industries. Bulk growth of β-Ga 2 O 3 has largely been implemented with the edge-defined film-fed growth (EFG) − and the Czochralski method. ,, A wide variety of epitaxial growth methods have been implemented to grow high-quality β-Ga 2 O 3 films, including metal-organic chemical vapor deposition (MOCVD), − halide vapor phase epitaxy (HVPE), , molecular beam epitaxy − (MBE), and pulsed laser deposition (PLD). − …”

Section: Introductionmentioning

confidence: 99%

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Lyle

House

Yang

et al. 2022

ACS Appl. Electron. Mater.

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Au/β-Ga2O3 Schottky contacts deposited at room temperature via electron-beam evaporation are characterized electrically with current density–voltage (J–V) and capacitance–voltage (C–V) measurements. The ideality factor and Schottky barrier heights measured from J–V and C–V are determined to be 1.32, 1.37 eV, and 1.98 eV, respectively. Due to the peculiarities of the electrical properties of the Au/β-Ga2O3 Schottky contacts, scanning transmission electron microscopy (STEM) was performed. High-angle annular dark-field (HAADF)-STEM imaging reveals an inhomogeneous chemical reaction occurred at the metal–semiconductor interface. The reaction is signified by void formation 5–20 nm below the interface, Ga diffusion into Au at the interface, and Ga interstitial diffusion toward the interface. Energy-dispersive X-ray spectroscopy (EDS) mapping shows Ga diffusion into the Au contact region accompanied by a transitional region of 4–5 nm.

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Characterization of Epitaxial β-(Al,Ga,In)2O3-Based Films and Applications as UV Photodetectors

Cited by 15 publications

References 15 publications

High performance solar-blind deep ultraviolet photodetectors via β-phase (In_0.09Ga_0.91)₂O₃ single crystalline film

High performance solar-blind deep ultraviolet photodetectors via β-phase (In_0.09Ga_0.91)₂O₃ single crystalline film

Spatially Resolved Investigation of the Bandgap Variation across a β-(Al_xGa_1–x)₂O₃/β-Ga₂O₃ Interface by STEM–VEELS

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

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Characterization of Epitaxial β-(Al,Ga,In)2O3-Based Films and Applications as UV Photodetectors

Cited by 15 publications

References 15 publications

High performance solar-blind deep ultraviolet photodetectors via β-phase (In0.09Ga0.91)2O3 single crystalline film

High performance solar-blind deep ultraviolet photodetectors via β-phase (In0.09Ga0.91)2O3 single crystalline film

Spatially Resolved Investigation of the Bandgap Variation across a β-(AlxGa1–x)2O3/β-Ga2O3 Interface by STEM–VEELS

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga2O3 Interface

Contact Info

Product

Resources

About

High performance solar-blind deep ultraviolet photodetectors via β-phase (In_0.09Ga_0.91)₂O₃ single crystalline film

High performance solar-blind deep ultraviolet photodetectors via β-phase (In_0.09Ga_0.91)₂O₃ single crystalline film

Spatially Resolved Investigation of the Bandgap Variation across a β-(Al_xGa_1–x)₂O₃/β-Ga₂O₃ Interface by STEM–VEELS

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface