Characterization of Encapsulants for High-Voltage High-Temperature Power Electronic Packaging

Yao, Yiying; Chen, Zheng; Lü, Gongxuan; Boroyevich, Dushan; Ngo, Khai D. T.

doi:10.1109/tcpmt.2011.2173344

Cited by 49 publications

(26 citation statements)

References 18 publications

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“…Many available encapsulant materials were originally targeted for use at temperatures below 175°C [68], and therefore tend to degrade at higher temperatures. The availability of suitable products is particularly scarce at temperatures above 200°C.…”

Section: Packagingmentioning

confidence: 99%

“…The availability of suitable products is particularly scarce at temperatures above 200°C. It is important to note that the suitability of a material is not gauged solely on whether it survives the temperature excursion; while some materials do not breakdown physically at higher temperatures, they still exhibit a change in properties such as dielectric strength as they age at higher temperature [68].…”

Section: Packagingmentioning

confidence: 99%

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Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Mantooth

Glover

Shepherd

2014

IEEE J. Emerg. Sel. Topics Power Electron.

207

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The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described. A synopsis of recent complementary technological developments in passives, integrated driver, and protection circuitry and electronic packaging are described, followed by an outline of the applications that stand to be impacted. A glimpse into the future based on the current technological trends is offered.Index Terms-Gallium nitride (GaN), power electronics, power integrated circuits, power semiconductor devices, silicon carbide (SiC), wide bandgap semiconductors.

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Section: Packagingmentioning

confidence: 99%

Section: Packagingmentioning

confidence: 99%

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Mantooth

Glover

Shepherd

2014

IEEE J. Emerg. Sel. Topics Power Electron.

207

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“…In this paper, the recommended properties and limitations of conformal coatings [11]- [20], underfills [21]- [32], molding compounds [23], [32]- [54], potting compounds [1], [55]- [72], and glob tops [73]- [81] are surveyed to identify those with potentials for high-temperature operation. The survey focuses on crucial properties listed in technical data sheets, such as the range of operation temperature, dielectric strength, and so on.…”

mentioning

confidence: 99%

“…Several encapsulants are claimed to have maximum operation temperatures above 250°C [14]- [17], [45], [46], [58]- [66]. However, recent reliability studies [1], [82] suggest that some properties of these encapsulants may slowly degrade before the temperature reaches 250°C. Therefore, recent publications aiming at increasing the maximum operation temperature (>250°C) of encapsulants are reviewed [83]- [118].…”

mentioning

confidence: 99%

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Survey of High-Temperature Polymeric Encapsulants for Power Electronics Packaging

Yao

Lü

Boroyevich

et al. 2015

IEEE Trans. Compon., Packag. Manufact. Technol.

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Semiconductor encapsulation is crucial to electronic packaging because it provides protection against mechanical stress, electrical breakdown, chemical erosions, α radiations, and so on. Conventional encapsulants are only applicable below 150°C. However, with increasing demand for high-density and high-temperature packaging, encapsulants that are functional at or above 250°C are required. In this paper, five types of encapsulants, including conformal coatings, underfills, molding compounds, potting compounds, and glob tops, are surveyed. First, recommended properties and selection criteria of each type of encapsulant are listed. Second, standard test methods for several crucial properties, including glass-transition temperature (T g ), coefficient of thermal expansion (CTE), dielectric strength, and so on are reviewed. Afterward, commercial products with highoperation temperature are surveyed. However, the results of the survey reveal a lack of high-temperature encapsulants. Therefore, this paper reviews recent progress in achieving encapsulants with both high-temperature capability and satisfactory properties. Material compositions other than epoxy, such as polyimide (PI), bismaleimide (BMI), and cyanate ester (CE), are potential encapsulants for high-temperature (250°C) operation, although their CTE needs to be tailored to limit internal stress. Fillers are reported to be efficient in reducing the CTE. In addition, fillers may also have a beneficial impact on the thermal stability of silicone-based encapsulants, whose high-temperature capability is limited by their thermal instability. IndexTerms-Encapsulant, high-temperature, plastic integrated circuit packaging, power electronic packaging, semiconductor device packaging.

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Dielectric strength of Al₂O₃/silicone composites after high‐temperature aging

Yao

Chen

Lü

et al. 2014

J of Applied Polymer Sci

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Silicones are widely used for electrical insulation owing to their high dielectric strength and thermal stability. However, recent studies revealed insufficient stability of silicone for high‐temperature applications. To study the effect of Al2O3 fiber on silicone stability, we measured the dielectric strength of unfilled silicone and Al2O3/silicone composites as a function of aging time at 250°C in air and analyzed data by Weibull probability distribution to determine characteristic dielectric strength (E0) and shape parameter (β). Prior to aging, unfilled silicone and composites had similar behavior, with E0 at about 20 kV/mm and β > 15. During aging, unfilled silicone developed both micro‐ and macrocracks, with β dropped below five in 240 h and E0 decreased significantly. Composites developed microcracks, with β dropped below 5 in longer time and E0 remained almost constant. Addition of Al2O3 slowed down crack growth in silicone matrix, resulting in longer lasting high‐temperature dielectric materials. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 41170.

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Characterization of Encapsulants for High-Voltage High-Temperature Power Electronic Packaging

Cited by 49 publications

References 18 publications

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Survey of High-Temperature Polymeric Encapsulants for Power Electronics Packaging

Dielectric strength of Al₂O₃/silicone composites after high‐temperature aging

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Characterization of Encapsulants for High-Voltage High-Temperature Power Electronic Packaging

Cited by 49 publications

References 18 publications

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Survey of High-Temperature Polymeric Encapsulants for Power Electronics Packaging

Dielectric strength of Al2O3/silicone composites after high‐temperature aging

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Product

Resources

About

Dielectric strength of Al₂O₃/silicone composites after high‐temperature aging