Characterization of double heterojunction GaAs/AlGaAs hot electron transistors

Yokoyama, Naoki; Imamura, K.; Ohshima, Tomoyuki; Nishi, H.; Muto, Shunichi; Kondo, Kazuhiro; Hiyamizu, S.

doi:10.1109/iedm.1984.190771

Cited by 4 publications

(10 citation statements)

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“…Hayes et al [4] and Yokoyama et al [5] have published (concurrently) spectroscopic results on hot-electron transport in GaAs, verifying the occurrence of nonequilibrium, quasi-ballistic transport. In the experiments by Yokoyama et al using the THETA device, electrons were injected into a 100-nm-wide n-type base, doped to a level of 5 x 10'' ~m -~, and analyzed using a 150-nm-wide AlGaAs rectangular, undoped collector barrier.…”

Section: Observation Of Quasi-ballistic and Ballistic Transportmentioning

confidence: 90%

“…In 1982 Hesto et al [3] proposed using an electron spectroscopy technique to detect energy distributions of ballistic electrons. Employing hotelectron transistors, such a technique was later used by Hayes et al [4], Yokoyama et al [ 5 ] , and Heiblum et al [6]. In 1985 Yokoyama et al [5] and Levi et al [7] provided evidence of quasi-ballistic hot-electron transport through heavily doped GaAs layers.…”

Section: Topyright 1990 By International Business Machines Corporationmentioning

confidence: 99%

“…Employing hotelectron transistors, such a technique was later used by Hayes et al [4], Yokoyama et al [ 5 ] , and Heiblum et al [6]. In 1985 Yokoyama et al [5] and Levi et al [7] provided evidence of quasi-ballistic hot-electron transport through heavily doped GaAs layers. That was followed by a direct demonstration of ballistic electron transport, and a determination of the ballistic portion of the traversing electrons, by Heiblum et al [8].…”

Section: Topyright 1990 By International Business Machines Corporationmentioning

confidence: 99%

“…[ 5 ] .Here we describe the use for that purpose of THETA devices Electron energy spectroscopy in GaAs was initiated by ....................... . .…”

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confidence: 99%

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Hot-Electron Transistors

Choi¹

1997

The Physics of Quantum Well Infrared Photodetectors

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We present an overview of work at the IBM Thomas J. Watson Research Center on the tunneling hot-electron transfer amplifier (THETA) device-including its use as an amplifier and as a tool for investigating ballistic hot-electron transport. In the initial, vertically configured version of the device, a quasi-monoenergetic, variable-energy, hot-electron beam is generated (via tunneling) which traverses a thin GaAs region and is then collected and energyanalyzed. As the hot electrons traverse the device, they are used to probe scattering events, band nonparabolicity, size-quantization effects, and intervalley transfer. A recent, lateral version of the device has been used to demonstrate the existence of ballistic hotelectron transport in the plane of a twodimensional electron gas, and the associated possibility of achieving high gain.

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Section: Observation Of Quasi-ballistic and Ballistic Transportmentioning

confidence: 90%

Section: Topyright 1990 By International Business Machines Corporationmentioning

confidence: 99%

Section: Topyright 1990 By International Business Machines Corporationmentioning

confidence: 99%

“…[ 5 ] .Here we describe the use for that purpose of THETA devices Electron energy spectroscopy in GaAs was initiated by ....................... . .…”

mentioning

confidence: 99%

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Hot-Electron Transistors

Choi¹

1997

The Physics of Quantum Well Infrared Photodetectors

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“…Incorporating NDR into transistor characteristics has the intriguing possibility of adding new functions [6,7] to transistors which have merely been current (or voltage) amplifiers. Indeed, in 1985 Yokoyama et al [7] demonstrated the first operation of a transistor with a new function-the RHET (resonant tunnelling hot electron transistor).…”

Section: Introductionmentioning

confidence: 99%

InGaAs-based resonant tunnelling barrier structures grown by MBE

Muto

Inata

1994

Semicond. Sci. Technol.

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The negative differential resistance properties of resonant tunnelling barrier diodes with InGaAs quantum wells developed by us for new transistor applications are reviewed. The emphasis is on the peak current density and the peak-to-valley ratio. The tunnel barriers of InAIAs, pseudomorphic AIAs, AlAsSb and GaAsSb are studied. A simple theoretical calculation which includes the mid-gap band non-parabolicity of tunnelling electrons is described. These theoretical calculations show excellent agreement with the observed peak current density at 77 K and 300 K and a reasonable agreement with the valley current density at 300 K.

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