Characterization of deep traps in semi-insulating gallium arsenide

Desnica, D.

doi:10.1007/bf02660412

Cited by 26 publications

(8 citation statements)

References 36 publications

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“…3 However, the TDH and DLTS techniques cannot be applied in semi-insulating ͑SI͒ GaAs, an important material that forms the basis of the GaAs microwave and integrated-circuit industries. A wellestablished method for looking at traps in SI materials is thermally stimulated current ͑TSC͒ spectroscopy; [5][6][7][8] however, TSC is not considered to be a quantitative technique because it involves carrier mobility, lifetime, and geometric factors, which are either unknown or poorly known. In this work we first show how to quantify a TSC spectrum, by normalizing with infrared photocurrent, and then apply this quantitative method ͑called NTSC͒ to study traps produced by electron irradiation in SI GaAs.…”

Section: Introductionmentioning

confidence: 99%

Identification of electron-irradiation defects in semi-insulating GaAs by normalized thermally stimulated current measurements

1997

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Primary defects induced by 1 MeV electron irradiation have been quantitatively studied in semi-insulating ͑SI͒ GaAs by using normalized thermally stimulated current spectroscopy, a new technique. Defects identical to ͑or similar to͒ those known in the thermally stimulated current literature as T 6 *(0.13 eV), T 5 ͑0.34 eV͒, and T 4 ͑0.31 eV͒ are produced at rates 0.70, 0.08, and 0.23 cm Ϫ1 , respectively; T 5 is also a strong trap in unirradiated SI GaAs. The defects T 6 * and T 4 correspond closely to the irradiation-induced traps E2͑0.14 eV͒ and E3͑0.30 eV͒, studied extensively by deep-level transient spectroscopy and Hall-effect measurements and assigned to the As vacancy. We thus infer that traps T 6 * and T 4 ͑and probably also T 5 ͒ in SI GaAs have As-vacancy character. ͓S0163-1829͑97͒04503-7͔

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Section: Introductionmentioning

confidence: 99%

Identification of electron-irradiation defects in semi-insulating GaAs by normalized thermally stimulated current measurements

1997

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“…A useful characterization technique for high-resistivity samples is thermally stimulated current ͑TSC͒ spectroscopy; e.g., TSC has been applied extensively to SI GaAs. [10][11][12] In this work, we use TSC to study SI GaN grown by molecular beam epitaxy ͑MBE͒. Although no other TSC work in GaN has been published at this time, to our knowledge, an abstract on the subject has recently appeared 13 and should be published soon.…”

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Thermally stimulated current trap in GaN

Fang

Kim

Aktaş

et al. 1996

Applied Physics Letters

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A thermally stimulated current peak, occurring at 100 K for a heating rate of 0.4 K/s, has been found in semi-insulating GaN grown by molecular beam epitaxy. This peak has contributions from two traps, with the main trap described by the following parameters: emission thermal activation energy E≂90±2 meV, effective capture cross-section σ≂3±1×10−22 cm−2, and Nμτ≂3±1 × 1014 cm−1 V −1, where N is the trap concentration, μ the mobility, and τ the free-carrier lifetime. This trap is much deeper than the typical shallow donors in conducting GaN, but shallower than any of the centers reported in recent deep level transient spectroscopy measurements.

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“…[1][2][3][4][5][6] In the TSC spectrum, six complete TSC peaks are usually observed; 5 however, we often find a ''thermal quenching'' ͑TQ͒ of TSC signals in the most prominent peak (T 5 ), i.e., a rapid drop of the TSC signal at a given temperature followed by a slow recovery at higher temperatures, often accompanied by attenuated current oscillations. In this letter, we present more detailed experimental results on the TQ and recovery processes and discuss the possible quenching mechanism.…”

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Electrical field enhanced thermal quenching of a prominent thermally stimulated current peak in semi-insulating GaAs

Fang

1995

Applied Physics Letters

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Detailed experimental results are presented for a ‘‘thermal quenching’’ of thermal stimulated current signals in the most prominent trap in undoped semi-insulating (SI) GaAs, T5 with an activation energy of 0.27–0.31 eV. A possible model for the thermal quenching of T5 is discussed, emphasizing the thermally stimulated nature of the quenching process, the effect of electric field and the formation of high-field domains. The thermal quenching of T5 can frequency be observed in SI GaAs grown by the vertical gradient freeze (VGF) technique, or by the liquid encapsulated Czochralski (LEC) technique under certain conditions.

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Characterization of deep traps in semi-insulating gallium arsenide

Cited by 26 publications

References 36 publications

Identification of electron-irradiation defects in semi-insulating GaAs by normalized thermally stimulated current measurements

Identification of electron-irradiation defects in semi-insulating GaAs by normalized thermally stimulated current measurements

Thermally stimulated current trap in GaN

Electrical field enhanced thermal quenching of a prominent thermally stimulated current peak in semi-insulating GaAs

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