Characterization of Cu2ZnSnS4 Thin Films Prepared by Solution-based Deposition Techniques

Influencing Mechanism of the Selenization Temperature and Time on the Power Conversion Efficiency of Cu2ZnSn(S,Se)4-Based Solar Cells

“…Except for XRD peaks of Mo substrate and MSSe, the XRD peaks marked by exhibit characteristic reflections of the kesterite CZTSSe phase,[39][40][41][42] implying that the CZTSSe films are composed of a single phase of kesterite CZTSSe, which is also confirmed by Raman scattering spectra, as shown inFig. 6.…”

“…Raman spectra with an excitation wavelength of 532 nm were recorded using a Renishaw system. The scanning electron microscope (SEM) measurements were performed using a Hitachi S-4800 equipped with an energy dispersive X-ray spectroscopy ( which are closed to the diffraction angles of (112), (220) and (312) planes of CZTS with kesterite structure [39][40][41][42] and Cu 3 SnS 4 with Tetragonal structure, 43 and of (111), (220) and (311) planes of Cu 2 SnS 3 and ZnS with cubic structure, 44 respectively. So, it is difficult to identify phase compositions of the film only by XRD.…”

“…Among the peaks, the diffraction intensity and angles of peaks marked by are in agreement with those of CZTSSe with kesterite structure, implying that the CZTS film transform into kesterite CZTSSe film. [39][40][41][42] Raman scattering measurement also demonstrates this transformation, as shown in Fig. 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 7/ 34 from 550 to 600 o C. While decrease in the intensity of Mo is due to that the Mo reacts with Se and S to form MSSe, and the higher the temperature, the more the Mo reacting with Se.…”

Synthesis and Characterization of Cu2FeSnSe4 Nanofilms

“…Here we report the synthesis of CFTSe nano-crystals by the hot-injection method, which represents a major function in the large-scale fabrication of solar cells based on the synthesis of nanocrystals. This process decreases fabrication costs compared with the conventional physical vapor deposition (PVD) technique [9,10], which is a contribution to the development of low-cost photoelectronic devices. In this paper, the growth procedure was examined preliminarily.…”

Photoelectrochemical (PEC) Investigation of Ga‐Doped MoBi2Se5 Thin Films Deposited by Arrested Precipitation Technique

“…The quaternary chalcogenide thin films are at front because of similar band gap of Cu(In,Ga)Se 5 (CIGS), and Cu 2 ZnSnS 4 (CZTS). [ 17,18 ] So, our first attempt was to prepare MoBi 2 Se 5 thin films and to see the influence of Ga doping on it with respect to structural, morphological, and PEC performance of the deposited thin films.…”