Abstract:Nanocrystalline Ga‐doped molybdenum bismuth selenide thin films have been deposited onto amorphous and fluorine‐doped tin oxide (FTO) coated glass substrate using arrested precipitation technique (APT), which is based on self‐organized growth process. Deposited thin films of MoBi(2‐x)GaxSe5 are characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and X‐ray photoelectron spectroscopy (XPS). XRD analysis shows mixed p… Show more
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