2017
DOI: 10.1039/c7ta08705e
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Characterization of Cu2SnS3polymorphism and its impact on optoelectronic properties

Abstract: Temperature induced Cu2SnS3 phase transition from a defective cubic to a monoclinic structure assessed by Raman spectroscopy and leading to higher photovoltaic efficiency.

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Cited by 55 publications
(67 citation statements)
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“…Excitation power was kept below 26 W/cm 2 in order to avoid presence of thermal effects in spectra. The first-order Raman spectrum of monocrystalline silicon (Si) was measured as a reference before and after each Raman spectrum acquisition, and spectra were corrected by imposing Si first order at 520 cm −1 (Oliva et al, 2017 ).…”
Section: Methodsmentioning
confidence: 99%
“…Excitation power was kept below 26 W/cm 2 in order to avoid presence of thermal effects in spectra. The first-order Raman spectrum of monocrystalline silicon (Si) was measured as a reference before and after each Raman spectrum acquisition, and spectra were corrected by imposing Si first order at 520 cm −1 (Oliva et al, 2017 ).…”
Section: Methodsmentioning
confidence: 99%
“…Mohite-type diamond-like ternary compound of Cu 2 SnS 3 (hereafter CTS) has emerged as a new environmental-friendly candidate in recent years due to its phononglass-electron-crystal characteristics [16][17][18] among the high-performance TE sulfides such as synthetic colusites [19,20]. Structurally, phase transition after doping is common and has already been reported in several references [21][22][23][24][25], and in our samples, it adapts three different variants including monoclinic, cubic and tetragonal phases (hereafter referred to as m-CTS (a = 6.653 Å, b = 11.537 Å, c = 6.665 Å [26]), c-CTS (a = b = c = 5.43 Å ) and t-CTS (a = b = 5.413 Å, c = 10.824 Å [27]), respectively) with the space group of Cc, F-43m and I-42, respectively. According to the theoretical work by Zhang et al [16], m-CTS is a direct-gap semiconductor containing three bands deriving from the strong hybridization between Cu-3d and S-3p orbitals in the valence band edge and one single band from Sn-4s in the conduction band (CB) edge, which means clearly the priority for p-type TE performance with a 3D hole transport channel mainly consisting of Cu-S and S-S networks, and moreover, the benefit for carrier concentration optimization by alloying and/or doping at the Sn site that can help suppress κ l while deteriorating little the electrical conduction.…”
Section: Introductionmentioning
confidence: 99%
“…where only the CuInSe 2 /ZnSe ratio was varied. However, in previous publications have been shown that different Cu concentrations also influence the properties of chalcogenides (secondary‐phase formation, defect formation, and structural polytype formation ) and have a great impact on absorber properties and solar cell efficiency. In line with this, we performed a detailed investigation of structural properties of CZISe with different Cu content and correlated them with various features found in Raman scattering spectra.…”
Section: Introductionmentioning
confidence: 99%