Characterization of Cu-poor surface on Cu-rich CuInSe2 film prepared by evaporating binary selenide compounds and its effect on solar efficiency

Lee, Doo Youl; Yun, Jae Ho; Yoon, Kyung Hoon; Ahn, Byung Tae

doi:10.1016/s0040-6090(02)00249-3

Cited by 14 publications

(5 citation statements)

References 16 publications

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“…Compared with CIGS sample without OVC, there was an additional XRD peak at 35.81° for incident angles below 0.4 o , which represented the Cu(In,Ga) 3 Se 5 OVC phase(Figure S6c,d, Supporting Information). [ 27,28 ] In the OVC system, there are various crystal structures such as Cu(In,Ga) 4 Se 7 , Cu(In,Ga) 3 Se 5 , and Cu(In,Ga) 5 Se 8 . [ 13 ] And the obtained OVC composition is depending on the growth temperature and the amount of source material.…”

Section: Resultsmentioning

confidence: 99%

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se₂ Solar Cells

Zhao

Yuan

Chang

et al. 2020

Adv Funct Materials

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Solution processing of Cu(In,Ga)Se2 (CIGS) absorber makes it cost‐competitive in the photovoltaic market. It is reported that copper‐poor ordered vacancy compound (OVC) is crucial for high performance CIGS solar cells. However, in solution process method, controllable formation of OVC is unavailable and limited research has been carried out. In this work, the controllable formation of the OVC phase on the CIGS surface is successful by controlling the selenization temperature and intentional variation of Cu/(In+Ga) stoichiometry in precursors for top layers and bulk layers deposition. The effects of OVC contents on the device performance are investigated. The CIGS thin film with OVC phase exhibits a lower valence band position. Meanwhile, the CIGS devices with optimized OVC content show decreased interface defects density and better carrier collection ability. The above advantages translate into a champion PCE of 16.39% for CIGS device with OVC phase, which is the champion performance among non‐hydrazine solution‐processed CIGS solar cells. The results demonstrate that the controllable formation of OVC phase approach should make a significant contribution to the efficiency promoting of solution processed CIGS solar cells.

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Section: Resultsmentioning

confidence: 99%

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se₂ Solar Cells

Zhao

Yuan

Chang

et al. 2020

Adv Funct Materials

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“…(Because of the standard-less measurement mode of AES and the porous nature of the bottom layer, the AES depth profile was considered only semiquantitatively in this work.) The presence of OVC phase is postulated to cause a rather positive effect on the device performance due to its hole-blocking nature, which intern reduces surface recombination. , The Cu enrichment in CRL will be addressed more in detail when the growth mechanism of the CISe film is discussed. The carbon in the bottom CRL was found to exist in the amorphous state as evidenced by XRD pattern of the same sample in which no carbide peaks were detected (Figure S1 in the Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Carbon-Impurity Affected Depth Elemental Distribution in Solution-Processed Inorganic Thin Films for Solar Cell Application

Rehan

Kim

Han

et al. 2016

ACS Appl. Mater. Interfaces

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A common feature of the inorganic thin films including Cu(In,Ga)(S,Se)2 fabricated by nonvacuum solution-based approaches is the doubled-layered structure, with a top dense inorganic film and a bottom carbon-containing residual layer. Although the latter has been considered to be the main efficiency limiting factor, (as a source of high series resistance), the exact influence of this layer is still not clear, and contradictory views are present. In this study, using a CISe as a model system, we report experimental evidence indicating that the carbon residual layer itself is electrically benign to the device performance. Conversely, carbon was found to play a significant role in determining the depth elemental distribution of final film, in which carbon selectively hinders the diffusion of Cu during selenization, resulting in significantly Cu-deficient top CISe layer while improving the film morphology. This carbon-affected compositional and morphological impact on the top CISe films is a determining factor for the device efficiency, which was supported by the finding that CISe solar cells processed from the precursor film containing intermediate amount of carbon demonstrated high efficiencies of up to 9.15% whereas the performances of the devices prepared from the precursor films with very high and very low carbon were notably poor.

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“…In the third stage, In, Cu, and Se sources were co-evaporated on the CIGS films to remove the Cu 2 Se secondary phase. The overall composition was controlled by adjusting the deposition time and evaporation rates and was confirmed by AES analysis [3,4]. The overall thickness of the film was about 2 µm.…”

Section: Methodsmentioning

confidence: 94%

“…The ZnO window layer was deposited by rf magnetron sputtering and it consisted of i-ZnO(50 nm) and n-ZnO(1 µm). The resistivities of the i-ZnO and n-ZnO layers were ~10 6 and 5x10 -4 ΩOcm, respectively [3,4].…”

Section: Methodsmentioning

confidence: 99%

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Characterization of Cu(In,Ga)<sub>3</sub>Se<sub>5</sub> Thin Film for Top Cell in CIGS Tandem Solar Cells

Kim

Ahn

Kwon

et al. 2007

SSP

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Cu(In,Ga)3Se5 films were deposited on soda-lime glass substrate by three-stage co-evaporation process. In the film, the band gap increased as the Cu content decreased and also as the Ga content increased. The grain size became smaller as the Ga content increased. In the Cu1.29(In1-xGax)3Se5 system, the maximum hole concentration was 1x1015 /cm3 when the Ga content was 0.5 and its band gap was 1.45 eV. Comparing the conventional CIGS solar cell with Cu0.8(In0.7Ga0.3)Se2 film, the series resistance is too large, indicating that further p-type doping in the Cu(In,Ga)3Se5 film is necessary to improve cell efficiency for the top cell application in CIGS tandem solar cells.

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Characterization of Cu-poor surface on Cu-rich CuInSe2 film prepared by evaporating binary selenide compounds and its effect on solar efficiency

Cited by 14 publications

References 16 publications

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se₂ Solar Cells

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se₂ Solar Cells

Carbon-Impurity Affected Depth Elemental Distribution in Solution-Processed Inorganic Thin Films for Solar Cell Application

Characterization of Cu(In,Ga)<sub>3</sub>Se<sub>5</sub> Thin Film for Top Cell in CIGS Tandem Solar Cells

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Characterization of Cu-poor surface on Cu-rich CuInSe2 film prepared by evaporating binary selenide compounds and its effect on solar efficiency

Cited by 14 publications

References 16 publications

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se2 Solar Cells

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se2 Solar Cells

Carbon-Impurity Affected Depth Elemental Distribution in Solution-Processed Inorganic Thin Films for Solar Cell Application

Characterization of Cu(In,Ga)<sub>3</sub>Se<sub>5</sub> Thin Film for Top Cell in CIGS Tandem Solar Cells

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Product

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Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se₂ Solar Cells

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se₂ Solar Cells