Characterization of Cu(In,Ga)&lt;sub&gt;3&lt;/sub&gt;Se&lt;sub&gt;5&lt;/sub&gt; Thin Film for Top Cell in CIGS Tandem Solar Cells

Solution processing of Cu(In,Ga)Se2 (CIGS) absorber makes it cost‐competitive in the photovoltaic market. It is reported that copper‐poor ordered vacancy compound (OVC) is crucial for high performance CIGS solar cells. However, in solution process method, controllable formation of OVC is unavailable and limited research has been carried out. In this work, the controllable formation of the OVC phase on the CIGS surface is successful by controlling the selenization temperature and intentional variation of Cu/(In+Ga) stoichiometry in precursors for top layers and bulk layers deposition. The effects of OVC contents on the device performance are investigated. The CIGS thin film with OVC phase exhibits a lower valence band position. Meanwhile, the CIGS devices with optimized OVC content show decreased interface defects density and better carrier collection ability. The above advantages translate into a champion PCE of 16.39% for CIGS device with OVC phase, which is the champion performance among non‐hydrazine solution‐processed CIGS solar cells. The results demonstrate that the controllable formation of OVC phase approach should make a significant contribution to the efficiency promoting of solution processed CIGS solar cells.

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Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se₂ Solar Cells

Zhao

Yuan

Chang

et al. 2020

Adv Funct Materials

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Effect of Substrate Temperature on One-Step Magnetron-Sputtered Cu(In,Ga)Se2 Thin Films for Solar Cells

Liu

Shen

et al. 2013

AMM

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CIGS thin films were deposited on soda lime glass by one-step magnetron sputtering using a single quaternary-CIGS target in stoichiometric proportions. The influences of substrate temperature on the structural, optical, and electrical properties of Cu(In,Ga)Se2 (CIGS) thin films were investigated. The phase structure of CIGS thin films was characterized by X-ray diffraction (XRD). The morphology and thickness of CIGS thin films were observed by Scanning Electron Microscope (SEM). The absorption coefficient of CIGS thin films was measured by Ultraviolet-visible Spectrophotometer. Four-point probe method was used to test the resistivity of CIGS thin films. Based on the results of characterization, the increase in crystallite size of CIGS was found to be significantly noticeable with increasing substrate temperature. UV-vis measurement analysis suggested that CIGS thin films deposited at different substrate temperatures had high absorption coefficient (~104 cm-1) and optical band gap (1.07-1.23 eV). The substrate temperature dependence of the resistivity of the films indicated that the resistivity of the films fall to about 0.5 Ω۰cm as the substrate glass was heated up to 300 °C.

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Characterization of Cu(In,Ga)<sub>3</sub>Se<sub>5</sub> Thin Film for Top Cell in CIGS Tandem Solar Cells

Cited by 2 publications

References 6 publications

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se₂ Solar Cells

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se₂ Solar Cells

Effect of Substrate Temperature on One-Step Magnetron-Sputtered Cu(In,Ga)Se<sub>2</sub> Thin Films for Solar Cells

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Characterization of Cu(In,Ga)<sub>3</sub>Se<sub>5</sub> Thin Film for Top Cell in CIGS Tandem Solar Cells

Cited by 2 publications

References 6 publications

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se2 Solar Cells

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se2 Solar Cells

Effect of Substrate Temperature on One-Step Magnetron-Sputtered Cu(In,Ga)Se<sub>2</sub> Thin Films for Solar Cells

Contact Info

Product

Resources

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Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se₂ Solar Cells

Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se₂ Solar Cells