Characterization of Copper Nanostructures Grown on Porous Silicon by Displacement Deposition

Abstract

Different copper nanostructures have been deposited onto porous silicon (PS) by using HF-based solutions of CuSO4 and immersion technique. The variation of the porous template parameters and deposition regimes has been found to allow obtaining of copper nanoparticles, copper rough films and porous copper layers. The dimensions, roughness, structural parameters and phase composition of the obtained copper nanostructures have been established. ©The Electrochemical Society

Germanium electrodeposition into porous silicon for silicon-germanium alloying

“…The first stage involved chemical (immersion) deposition of copper into the subsurface layer from an aqueous solution containing 0.03 M CuSO 4 and 0.14 M HF for 3 min. This results in silicon's chemical dissolution and displacement of its atoms with those of copper [22] . In the case of porous silicon, this process is generally contained in its subsurface area due to significant diffusion limitations, as well as the presence of large amounts of structural defects, and the rest of the layer remains mostly intact.…”