Germanium electrodeposition into porous silicon for silicon-germanium alloying

Grevtsov, Nikita; Чубенко, Е. Б.; Bondarenko, Vitaly; Gavrilin, Ilya; Dronov, Alexey; Gavrilov, Sergey

doi:10.1016/j.mtla.2022.101558

Cited by 7 publications

(3 citation statements)

References 30 publications

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“…Nanostructures based on Ge-Si solid alloys can also be used in optoelectronics [8,[15][16][17][18]. Thus, the development of inexpensive methods for their growth is in high demand [19]. Non-refractory materials such as Ge can be applied in "flexible electronics" devices.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures

et al. 2023

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Silicon–germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the number of laser pulses (single-shot and multi-shot regimes) on the crystallization of the layers. Based on structural Raman spectroscopy analysis, several annealing regimes were revealed depending on laser fluence, including partial or complete crystallization of the components and formation of solid Si–Ge alloys. Conditions for selective crystallization of germanium when Si remains amorphous and there is no intermixing between the Si and Ge layers were found. Femtosecond mid-IR laser annealing appeared to be particularly favorable for such selective crystallization. Similar crystallization regimes were observed for both single-shot and multi-shot conditions, although at lower fluences and with a lower selectivity in the latter case. A theoretical analysis was carried out based on the laser energy absorption mechanisms, thermal stresses, and non-thermal effects.

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Section: Introductionmentioning

confidence: 99%

Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures

et al. 2023

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“…SEM images shown in Figure reveal that zinc electrodeposition on TiO 2 NTAs, both as-anodized and annealed, is able to achieve zinc NHexs with fairly clear crystal structures. The inhomogeneity of the deposits is directly related to the presence of defects on the substrate surface. − Past literature has reported on micron-scale platelet-shaped crystal formation in the glycol-based DES vs rice-grain crystal formation in urea-based DES . The stacking of zinc NHexs as seen on some deposits in Figure d can be observed at longer deposition periods. , …”

Section: Discussionmentioning

confidence: 96%

Zinc Nanoparticles Electrodeposited on TiO₂Nanotube Arrays Using Deep Eutectic Solvents for Implantable Electrochemical Sensors

Wang

Phelps

Abdolvand

et al. 2023

ACS Appl. Nano Mater.

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This work reports on the electrodeposition of zinc on nanoporous metal oxide titania nanotube arrays (TiO2 NTAs) using a zinc-containing deep eutectic solvent (Zn2+–DES). The effects of substrate morphology and crystallinity, deposition temperature, zinc concentration, and deposition time on the morphology and electrochemical properties of the Zn/TiO2 NTAs were investigated. Two-dimensional zinc nanohexagons (NHexs) with a mean diameter of ∼300 nm and a thickness of 10–20 nm were decorated onto the TiO2 NTAs (with a pore diameter of ∼80 nm and a tube length of ∼5 μm) via electrodeposition at −1.6 V using Zn2+–DES. Cyclic voltammetry tests on the Zn2+–DES electrolyte revealed an electrochemical window of ∼3.5 V, and the diffusion coefficient of Zn2+ was found to be 4.29 × 10–10 cm2 s–1 at room temperature and 7.10 × 10–10 cm2 s–1 at 40 °C. Zinc nucleation on TiO2 NTA substrates followed an instantaneous model. Using a higher electrodeposition temperature increased the nucleation and growth rate of zinc NHexs, while annealing TiO2 NTAs was found to improve their uniformity and morphology. During the initial stage of deposition, hexagonal close-packed zinc NHexs were found to preferentially grow on tetragonal anatase TiO2 NTAs. The electrodeposition of zinc resulted in lowering the impedance and improving the overall electrochemical properties of TiO2 NTAs. The Zn/TiO2 NTAs developed in this study offer a promising electrocatalyst material system for implantable electrochemical sensors.

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“…In the current work we present original results on electrochemical deposition of ZnO particles and nanocrystals into PS, causing it to develop noteworthy optical properties [6,7]. Recently, very attractive results on deposition of germanium into PS were also demonstrated [8]. We discovered that PS filled with Ge can be converted into Si1-xGex alloy films with the use of hightemperature processing [9].…”

Section: Introductionmentioning

confidence: 94%

27‐1: Invited Paper: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors

Grevtsov,

Lopato,

Dolgyi

et al. 2024

Symp Digest of Tech Papers

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A variety of micro‐ and nanocomposite materials based on electrochemically‐acquired porous silicon are produced and evaluated in terms of their applicability to display technology. It is shown that porous silicon provides a versatile and well‐adjustable template for filling with other materials, which can outright change its electrophysical parameters. While, in terms of display applications, porous silicon layers are mostly prominent for their photohiminescence not akin to monocrystalline silicon, this property can be additionally enhanced by employing a variety of electrochemical techniques to form metal deposits of certain shapes.

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Germanium electrodeposition into porous silicon for silicon-germanium alloying

Cited by 7 publications

References 30 publications

Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures

Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures

Zinc Nanoparticles Electrodeposited on TiO₂Nanotube Arrays Using Deep Eutectic Solvents for Implantable Electrochemical Sensors

27‐1: Invited Paper: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors

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Germanium electrodeposition into porous silicon for silicon-germanium alloying

Cited by 7 publications

References 30 publications

Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures

Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures

Zinc Nanoparticles Electrodeposited on TiO2Nanotube Arrays Using Deep Eutectic Solvents for Implantable Electrochemical Sensors

27‐1: Invited Paper: Nanocomposites and Alloys Based on Porous Silicon Filled with Metals and Semiconductors

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Zinc Nanoparticles Electrodeposited on TiO₂Nanotube Arrays Using Deep Eutectic Solvents for Implantable Electrochemical Sensors